SI5903DC-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Application of SI5903DC-T1-GE3

The SI5903DC-T1-GE3 is an array of four N-channel enhancement mode MOSFETs. The SI5903DC-T1-GE3 has a wide range of applications in switching, power management and signal switching. This device is particularly suitable for use in high voltage and high current applications.

Working Principle of SI5903DC-T1-GE3

The basic working principle of the SI5903DC-T1-GE3 is the same as all other MOSFETs. A gate voltage is applied to control the flow of electrons through the MOSFET. When no voltage is applied to the gate, the MOSFET is not activated. When a voltage is applied to the gate, it creates an electric field in the region of the MOSFET. This electric field causes electrons to flow from the source to the drain. Depending on the voltage applied to the gate, the drain current can be controlled.

The SI5903DC-T1-GE3 is a four-device array, with each device in the array controlled by a separate gate voltage. This allows for four distinct operating states. For example, in a high-side switch situation, one device can be used to drive the load, another device can be used to handle the reverse current path, and the other two devices can be used to isolate the two devices.

The SI5903DC-T1-GE3 has a drain-source breakdown voltage of 400V and a total gate charge of 11nC. This allows for relatively high voltage applications as well as high currents for controlling larger loads. In addition, the devices have a maximum junction-to-ambient temperature of 175°C, making them suitable for high temperature applications.

Conclusion

The SI5903DC-T1-GE3 is a four-device MOSFET array suitable for high voltage, high current, and high temperature applications. It has applications in a variety of switching, power management, and signal switching applications. The four separate gates allow for four distinct operating states, making it an ideal solution for high side switching, reverse current paths, and isolation of two devices.

The specific data is subject to PDF, and the above content is for reference