SI5908DC-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	SI5908
Supplier Device Package:	1206-8 ChipFET™
Package / Case:	8-SMD, Flat Lead
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.1W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	7.5nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4.4A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

SI5908DC-T1-GE3 is a member of a new family of Dual FET Array devices providing optimized performance for high voltage applications. Its robust architecture and efficient construction provide substantial benefits for designers of high voltage power control and power correction circuits. It not only offers Increased performance over other products, but most importantly it helps to significantly reduce circuit board cost.

Application Field of SI5908DC-T1-GE3

The SI5908DC-T1-GE3 is ideally suited for a wide variety of power control and power correction applications. It is particularly suitable for applications in switch mode power supplies, including high frequency converters and inverters, where efficiency and high reliability are important factors. It is also ideally suited for variable frequency drive applications, such as variable speed motors, servo motors and stepper motors, where performance and cost-efficiency are important criteria.The SI5908DC-T1-GE3 is ideally suited for use in applications where low output impedance and low noise is required. It can also be used in industrial process control, instrumentation systems and power electronics. It is also a suitable choice for high voltage power amplifier, HVAC, high power audio and other high frequency, high power, and/or high voltage circuits.

Working Principle of SI5908DC-T1-GE3

The SI5908DC-T1-GE3 is a dual FET array device that operates by providing a voltage-controlled path between two FETs. The device consists of two series-connected FETs with a voltage-controlled gate contact between them. The gate contact is controlled via an integrated isolator that senses the voltage between the FETs and adjusts the current flow continually which in turn controls the voltage across the FETs.The FETs are connected in series in order to increase their blocking capabilities. The device is constructed such that the first FET acts as the main switching device while the second FET acts as a protective device in the event of high voltage transients.The two FETs are connected such that the integrated isolator is connected to the gate of the first FET, while the source of the first FET is connected to the drain of the second FET. The source of the second FET is then connected to ground, while the drain of the first FET is connected to the output terminal. The total amount of current flowing through the FETs, and therefore the output voltage, is determined by the voltage applied to the gate of the first FET.The SI5908DC-T1-GE3 also provides improved protection against heat damage due to its dispersed heat dissipation system. The heat dissipation system consists of a thermal plate that is embedded in the package and provides additional thermal mass to help dissipate heat more efficiently.

Conclusion

The SI5908DC-T1-GE3 is an advanced dual FET array device that provides optimized performance for high voltage applications. It is ideally suited for use in a variety of power control and power correction applications, including the automotive, electric motor, and HVAC industries. The device features a robust architecture, an efficient construction, a low output impedance and noise, and an integrated thermal plate to help protect against heat damage.

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