Allicdata Part #: | SI5975DC-T1-E3-ND |
Manufacturer Part#: |
SI5975DC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 12V 3.1A CHIPFET |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 3.1A 1.1W Surf... |
DataSheet: | SI5975DC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A |
Rds On (Max) @ Id, Vgs: | 86 mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id: | 450mV @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
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?The SI5975DC-T1-E3 (SI5975) is a 3-terminal P-channel Enhancement Mosfet Array commonly used in industrial, automotive, aerospace and military applications. Built-in high-side MOSFETs provide high input impedance with variable gate voltage control. It also features a high on-resistance differential, low gate-source leakage current, and low gate capacitance.
How does the SI5975 work? The gate of the MOSFET is basically an insulated thread. When biased to the proper voltage, it allows current to flow from the source to the drain. It does so by creating an electric field in the MOSFET\'s insulated gate that pulls electrons from the source and pushes them into the drain. The overall drain current is determined by the voltage applied to the gate, the voltage applied to the source and the resistance of the MOSFET. The current can be altered by adjusting the gate voltage.
The features of the SI5975 include its non-volatile memory that allows it to store up to 20 bits of encoded data. It has a low on-resistance differential of 3.2mΩ and is capable of switching up to 15V at 500mA. The gate capacitance is less than 5nF, making it ideal for high-speed switching applications. The SI5975 also contains an integrated circuit protection diodes on all feedback pins to provide protection from overvoltage spikes or transients. This makes it suitable for applications requiring hard switching, such as automotive, consumer, and industrial electronics.
Some applications for the SI5975 include power supply sequencing, protection circuits, primary switching, and regulated output current control. It can also be used for synchronous buck switching, switching of high-power loads, start/stop control circuits, and pulse-width modulation (PWM) applications. The SI5975 has a maximum allowed input voltage of 40V and a maximum allowed channel power of 20W. It is available in an 8-pin SOIC and an 8-pin TSSOP package. Its operating temperature range is -40°C to 125°C and its storage temperature range is -55°C to 150°C. Its typical leakage current is 0.1nA. The SI5975 is UL and TÜV certified.
The specific data is subject to PDF, and the above content is for reference
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