SI5922DU-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5922DU-T1-GE3TR-ND |
Manufacturer Part#: |
SI5922DU-T1-GE3 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 30V 6A POWERPAK |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6A (Tc) 10.4W ... |
DataSheet: | SI5922DU-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.13195 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Rds On (Max) @ Id, Vgs: | 19.2 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 765pF @ 15V |
Power - Max: | 10.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® ChipFET™ Dual |
Supplier Device Package: | PowerPAK® ChipFet Dual |
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SI5922DU-T1-GE3 is a type of field effect transistor (FET) array. It is a monolithic power IC designed specifically for switching and switching-regulating applications. It is a three-terminal single N-channel Array with integrated components included to reduce power dissipation.
The main component of this device is a N-channel MOSFET, which is the core component of a FET array. A MOSFET is an insulated gate device that operates based on the movement of electrons along an electric potential difference. It is a three terminal component with a source, drain and gate terminal. The source and the gate terminals provide the gate voltage and the drain terminal receives the current output. The gate voltage is used to control the current that passes through the drain.
The SI5922DU-T1-GE3 is designed to be very high efficiency with low resistance and low power loss. It is typically used in switching and switching-regulating analog power supplies and battery management systems. It has a low operating voltage range of 0-36V, a maximum continuous drain current of 2.5 A and an on-resistance of only 2.5 mΩ. It also features a maximum operating temperature of 150°C and is certified to ROHS and EU Directive 93/42 standards.
To use this field-effect transistor array, it must first be wired correctly into the circuit. The source and the drain are connected to the intended power source and the gate is connected to a controller, such as a microcontroller or a switching element. The controller provides a gate voltage that determines the current that flows through the device. The SI5922DU-T1-GE3 is pre-configured as a logic level device; when the controller provides a logic “0”, the device will turn on and when the controller provides a logic “1”, the device will turn off.
The SI5922DU-T1-GE3 has various applications in battery management systems and switching power supplies. It can be used in battery charger circuits to control the charging current and can also be used to provide overcurrent protection. In switching power supplies, the SI5922DU-T1-GE3 can be used to switch the power on and off and to control the current levels. This can help reduce power losses and increase the efficiency of the power supply.
The SI5922DU-T1-GE3 is a reliable and cost-effective device for applications that require high efficiency. Its ability to provide accurate and reliable current control makes it an ideal choice for various power management applications. In addition, its integrated components reduce the number of external components that are needed and make the device easy to install. The SI5922DU-T1-GE3 is an excellent choice for applications where high efficiency and low power dissipation are required.
The specific data is subject to PDF, and the above content is for reference
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