Allicdata Part #: | SI5905DC-T1-GE3-ND |
Manufacturer Part#: |
SI5905DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 8V 3A 1206-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 8V 3A 1.1W Surface... |
DataSheet: | SI5905DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 450mV @ 250µA (Min) |
Base Part Number: | SI5905 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Drain to Source Voltage (Vdss): | 8V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5905DC-T1-GE3 is part of a wide range of transistors and FETs offered by Siliconix. It is a high power dual common-drain Mosfet array and belongs to the IWP (input/output transistor) family. As such, it is suitable for use in applications that require high input/output current and frequency response. In particular, it is a good choice for power management, audio amplifiers, and RF power amplifiers.
The SI5905DC-T1-GE3 is a dual common-drain, N-channel Mosfet array. It has an operating voltage of 12V and a gate voltage of 3V. The output current is up to 20A and the switching frequency is 200kHz. It is available in an 8-pin package and is RoHS compliant.
For applications that require increased current capabilities, the SI5905DC-T1-GE3 offers a common-emitter configuration. This configuration effectively doubles the current limit with a single package. The circuitry of the device also allows for a low RDS ON feature which helps keep losses low.
The SI5905DC-T1-GE3 is designed to be used in areas that require high efficiency and low power dissipation. It can be used in power management applications, audio amplifiers, switches, and other audio-frequency circuits. Its low input capacitance makes it suitable for use in high-speed video and audio applications. The device also has excellent thermal dissipation characteristics and is capable of dissipating up to 25W at TJ=175°C.
The device supports both positive and negative gate to source voltages, allowing for improved design versatility. The source terminal also carries a temperature sensor, while the gate offers additional protection against voltage and temperature overload. The device also features ESD protection, reverse blocking, and controlled impedance.
The SI5905DC-T1-GE3 is a versatile and powerful Mosfet array. It has high input/output current capability and excellent thermal dissipation. It is suitable for a variety of applications, including power management, audio amplifiers, switches, and other audio-frequency circuits. Its low input capacitance, ESD protection, reverse blocking, and controlled impedance make it a great choice for design engineers.
The specific data is subject to PDF, and the above content is for reference
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