
Allicdata Part #: | SI7601DN-T1-E3-ND |
Manufacturer Part#: |
SI7601DN-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 16A 1212-8 |
More Detail: | P-Channel 20V 16A (Tc) 3.8W (Ta), 52W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1870pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19.2 mOhm @ 11A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI7601DN-T1-E3 is an important part of today\'s electronics. It is used in a variety of applications, and is an essential component of many everyday devices. The SI7601DN-T1-E3 is a field-effect transistor (FET), and is also known as a metal-oxide semiconductor field-effect transistor (MOSFET). This type of transistor is so named because it works by controlling a conductive layer of metal oxide at its source.
In its simplest form, a MOSFET is two parallel plates separated by an insulating layer. A bias voltage is applied to the gate of the transistor, which causes a voltage to appear between the two plates, resulting in a current flow through the transistor. The amount of current that flows is controlled by the voltage applied to the gate. This allows the SI7601DN-T1-E3 to be used to accurately control the amount of current that flows through an external circuit. The SI7601DN-T1-E3 also has a maximum gate voltage limit, so it can be used to turn off the current flow too.
The SI7601DN-T1-E3 is a single-channel, low-power MOSFET, making it ideal for low-power applications. It is commonly used in digital switches, amplifiers, and voltage regulators. The SI7601DN-T1-E3 can also be used in motor control and power management applications, such as low-power LED drivers and many other applications.
The SI7601DN-T1-E3 is a popular and reliable part for any application where an intermittent current is needed in an isolated environment. Its low-power usage and reliable operation makes it ideal for a variety of applications and industries, ranging from consumer products to telecommunication and industrial equipment. It is also used in various automotive applications, including battery management and engine control systems.
In addition to its use in traditional electronics, the SI7601DN-T1-E3 can also be used in modern applications, such as solar cell arrays and high-powered photovoltaics. It can be used to accurately control the amount of current that is needed by solar cells, while still maintaining the required voltage. This makes it a great solution for both residential and commercial solar applications.
The SI7601DN-T1-E3 is an excellent choice when maximum flexibility is needed in an application. Its low power usage and reliable performance make it an excellent choice for any application that requires a low-power, reliable transistor. The SI7601DN-T1-E3 is a great choice for use in digital switches, amplifiers, voltage regulators, motor control systems, LED drivers, and many others.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI7674DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7658ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 60A PPAK ... |
SI7621DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4A 1212-8... |
SI7682DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 20A PPAK ... |
SI7661CJ+ | Maxim Integr... | 0.0 $ | 1000 | IC REG SWTCHD CAP INV RAT... |
SI7629DN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 35A 1212-... |
SI7661CSA+T | Maxim Integr... | 0.0 $ | 1000 | IC REG SWTCHD CAP INV 20M... |
SI7661CSA+ | Maxim Integr... | -- | 303 | IC REG SWTCHD CAP INV 20M... |
SI7617DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 35A 1212-... |
SI7633DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 60A PPAK ... |
SI7661DJ | Maxim Integr... | -- | 1000 | IC REG SWTCHD CAP INV RAT... |
SI7636DP-T1-E3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 30V 17A PPAK ... |
SI7635DP-T1-GE3 | Vishay Silic... | 0.46 $ | 1000 | MOSFET P-CH 20V 40A PPAK ... |
SI7620DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 150V 13A 1212... |
SI7623DN-T1-GE3 | Vishay Silic... | 0.54 $ | 1000 | MOSFET P-CH 20V 35A 1212-... |
SI7613DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 35A 1212-... |
SI7686DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SI7615ADN-T1-GE3 | Vishay Silic... | -- | 18000 | MOSFET P-CH 20V 35A 1212-... |
SI7686DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SI7664DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7615CDN-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET P-CH 20V 35A POWER... |
SI7611DN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 40V 18A 1212-... |
SI7634BDP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7674DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7601DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 16A 1212-... |
SI7664DP-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7661ESA+ | Maxim Integr... | 2.51 $ | 4 | IC REG SWTCHD CAP INV 20M... |
SI7615DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 35A 1212-... |
SI7668ADP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7619DN-T1-GE3 | Vishay Silic... | -- | 54000 | MOSFET P-CH 30V 24A 1212-... |
SI7601DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 16A 1212-... |
SI7682DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 20A PPAK ... |
SI7655ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 40A 1212-... |
SI7636DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 17A PPAK ... |
SI7625DN-T1-GE3 | Vishay Silic... | -- | 36000 | MOSFET P-CH 30V 35A 1212-... |
SI7655DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 40A PPAK ... |
SI7661ESA+T | Maxim Integr... | 1.9 $ | 1000 | IC REG SWTCHD CAP INV 20M... |
SI7634BDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7668ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
