Allicdata Part #: | SI7682DP-T1-E3-ND |
Manufacturer Part#: |
SI7682DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 20A PPAK SO-8 |
More Detail: | N-Channel 30V 20A (Tc) 5W (Ta), 27.5W (Tc) Surface... |
DataSheet: | SI7682DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 27.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1595pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7682DP-T1-E3 is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device that is specifically designed for high current, low voltage applications.
MOSFETs are semiconductor devices composed of a metal-oxide-semiconductor layer and a gate electrode. Applying a voltage to the gate, positive or negative, causes the MOSFET to switch between conducting and non-conducting states. The unique characteristics of the MOSFET, such as its low power consumption, fast switching speeds, and high frequencies, make it the optimal choice in a variety of electronic circuits.
The SI7682DP-T1-E3 is specifically designed to offer an optimized combination of low on-state resistance and fast switching time. Its breakdown voltage is rated at 7V, with a 5.75V gate-source rating, designed for use in low voltage applications. Its on-state resistance is lower than 0.03 Ohms, making it ideal for applications requiring high current flows. The SI7682DP-T1-E3’s fast switching response time of less than 1.8nsec means that it is capable of switching at very high frequencies. This makes it ideal for applications such as switch mode power supplies and power amplifiers. The device also features gate charge protection to ensure that it does not latch up when subjected to high inrush currents.
The SI7682DP-T1-E3 is available in a surface-mount package and is suitable for use in automotive, industrial, and consumer applications. It is highly reliable and is RoHS compliant, making it an excellent choice for environmentally sensitive applications. It is also rated to operate over a wide temperature range, making it suitable for a variety of applications.
In summary, the SI7682DP-T1-E3 is an N-channel MOSFET device that is specifically designed for high current, low voltage applications. Its low on-state resistance, fast switching speed, and gate charge protection make it suitable for a variety of applications, from automotive to industrial to consumer. It is RoHS compliant and is available in a surface-mount package, making it a reliable and environmentally friendly solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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