| Allicdata Part #: | SI7611DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SI7611DN-T1-GE3 |
| Price: | $ 0.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 40V 18A 1212-8P-Channel 40V 18A (Tc) 3... |
| More Detail: | N/A |
| DataSheet: | SI7611DN-T1-GE3 Datasheet/PDF |
| Quantity: | 9000 |
| 1 +: | $ 0.83000 |
| 10 +: | $ 0.80510 |
| 100 +: | $ 0.78850 |
| 1000 +: | $ 0.77190 |
| 10000 +: | $ 0.74700 |
| Series: | TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1980pF @ 20V |
| FET Feature: | -- |
| Power Dissipation (Max): | 3.7W (Ta), 39W (Tc) |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Package / Case: | PowerPAK® 1212-8 |
| Base Part Number: | -- |
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1. Description
The basic index to measure the thermal performance of a device is the junction-to-case thermal resistance Rθjc or the junction-to-foot thermal resistance Rθjf. This parameter measures the device receiver installed under unlimited heat, so it is a characteristic of the device In other words, it has nothing to do with the object on which the attribute device is installed. Comparing PowerPAK 1212-8 and PowerPAK SO-8, the standard TSSOP-8 and SO-8 have the same steady-state performance. By minimizing the thermal resistance from junction to pin, the MOSFET die temperature is very close to that of the PC board. Consider installing a PC board with a board temperature of 45°C on four devices. Assume that the power consumption of each device is 2W. Using the thermal resistance characteristics of the junction pins of the device PowerPAK 1212-8 and other SMT packages, it is determined that the temperature of the PowerPAK 1212-8 die is 49.8°C, the temperature of the standard SO-8 is 85°C, and the temperature of the standard SO-8 is 149°C , Standard TSSOP-8 and TSOP-6 are 125°C. This is a PowerPAK 1212-8 circuit board with a temperature rise of 4.8°C, and the temperature rise of other SMT packages exceeds 40°C. A rise of 4.8 °C has the least impact on rDS(ON), while the rise Exceeding 40 °C can cause rDS(ON) to increase by up to 20%.
2. PRODUCT SUMMARY

3. Feature
1. TrenchFET® Power MOSFET
2. Low thermal resistance PowerPAK® package with small size and 1.07 mm thin profile
3. 100% Rg and UIS test
4. Application
1. Load switch
5. PRODUCT SUMMARY

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| SI7686DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A PPAK ... |
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| SI7615DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 35A 1212-... |
| SI7668ADP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
| SI7682DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 20A PPAK ... |
| SI7655ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 40A 1212-... |
| SI7636DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 17A PPAK ... |
| SI7661DJ | Maxim Integr... | -- | 1000 | IC REG SWTCHD CAP INV RAT... |
| SI7615ADN-T1-GE3 | Vishay Silic... | -- | 18000 | MOSFET P-CH 20V 35A 1212-... |
| SI7661ESA+T | Maxim Integr... | 1.9 $ | 1000 | IC REG SWTCHD CAP INV 20M... |
| SI7625DN-T1-GE3 | Vishay Silic... | -- | 36000 | MOSFET P-CH 30V 35A 1212-... |
| SI7674DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 40A PPAK ... |
| SI7634BDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
| SI7601DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 16A 1212-... |
| SI7668ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
| SI7661CJ+ | Maxim Integr... | 0.0 $ | 1000 | IC REG SWTCHD CAP INV RAT... |
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| SI7629DN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 20V 35A 1212-... |
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SI7611DN-T1-GE3 Datasheet/PDF