SI7633DP-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI7633DP-T1-GE3 Application Field and Working Principle

The SI7633DP-T1-GE3 is a single NMOS Field Effect Transistor (FET) which is used primarily in analogue and digital fixed voltage circuits. It is designed for applications where extended temperature range performance, high current-handling capabilities, and low power dissipation are required. It is suitable for use in power systems signal conditioning, signal transmission, voltage control, and other related applications.

Application Field of the SI7633DP-T1-GE3

The SI7633DP-T1-GE3 provides high current-handling capability with very low power dissipation. This makes it a popular choice for applications in power systems such as computer power supplies, mobile phone chargers, and other power related applications. It is also ideal for use in signal conditioning circuits, such as in automotive data systems, voltage control circuits, audio amplifiers, and in other related applications.

Working Principle of the SI7633DP-T1-GE3

The SI7633DP-T1-GE3 is an N-type metal-oxide-semiconductor Field Effect Transistor (NMOSFET). It consists of an N-type source, an N-type drain, and a gate separated by an insulated gate oxide. When an electric field is applied to the gate, it changes the conductance of the channel between the source and the drain, which then controls current flow through the device.

The SI7633DP-T1-GE3 has a tetano gate input which allows the user to use a single supply with no need for a gate driver. It has a very low drain-source resistance, which provides high current-handling capabilities for a wide range of applications. The design of the SI7633DP-T1-GE3 is optimized for operation at high frequencies up to 25 MHz, and at extended temperature ranges of -55°C to +150°C.

The SI7633DP-T1-GE3 is also designed with power savings in mind, as the device is capable of operating at very low voltages. It has a low gate charge and can be operated at low gate capacitance, reducing power consumption and improving the device\'s efficiency. The device is also designed with a symmetrical body which helps to keep the transistor stable in high voltage applications.

In summary, the SI7633DP-T1-GE3 is a single NMOS FET which has a wide range of applications in analog and digital circuits. It is designed with a tetano gate input, high current-handling capabilities, low power dissipation, and an extended temperature range. It is suitable for use in applications such as computer power supplies, audio amplifiers, and other power and signal related applications.

The specific data is subject to PDF, and the above content is for reference