SI7615ADN-T1-GE3

The SI7615ADN-T1-GE3 is a high-performance N-channel enhancement mode MOSFET (metal-oxide semiconductor field-effect transistor) manufactured by Vishay Siliconix. It operates with an exceptional drain-source breakdown voltage of 20V, which is significantly higher than most traditional MOSFETs. With an attractive on-state resistance, this MOSFET offers excellent power-saving capabilities with low quiescent current consumption and low input capacitance.

The working principle of a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is based on controlling the flow of electrons through a conductive channel created by the source and drain terminals. When a voltage is applied between drain and source terminals, a voltage drop occurs across a MOSFET\'s gate oxide layer. This voltage drop creates an electric field that modulates the flow of current through the channel. This is known as the MOSFETs channel modulation region and its effectiveness is highly dependent on the gate-source voltage applied. By changing the gate-source voltage, the current flow through the channel can be controlled or switched on and off.

The SI7615ADN-T1-GE3 can be used for a variety of applications, including power management and voltage regulation. As a power switch, the device is well-suited for use in high-efficiency power supplies, as well as powering controllers, LED lighting, and motor drivers. The device also performs well as a level shifter, voltage regulator, and power switch in DC/DC converters. Furthermore, the device is designed to maintain a constant voltage throughout its range and is compatible with a range of low-voltage systems.

The reliability of the SI7615ADN-T1-GE3 is unsurpassed, featuring a maximum power dissipation of 2.0W and an operational temperature range of -55°C to +150°C. It is fully compatible with standard process control functions and offers a wide variety of features, including built-in protection circuits and an Anti-Parallel N-Channel MOSFET for maximum power efficiency and output performance.

The SI7615ADN-T1-GE3 MOSFET is an excellent solution for a wide variety of applications, including high-efficiency power supply, motor control applications, and voltage regulation. By combining low power dissipation, high-reliability, and gate modulation performance, the device offers superior performance in a broad range of applications. The device’s ability to maintain a constant voltage across its range allows it to be used in a range of low-voltage systems, making it a dependable choice for any application.