SI7619DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7619DN-T1-GE3TR-ND

Manufacturer Part#:

SI7619DN-T1-GE3

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 30V 24A 1212-8 PPAK
More Detail: P-Channel 30V 24A (Tc) 3.5W (Ta), 27.8W (Tc) Surfa...
DataSheet: SI7619DN-T1-GE3 datasheetSI7619DN-T1-GE3 Datasheet/PDF
Quantity: 54000
1 +: $ 0.25000
10 +: $ 0.24250
100 +: $ 0.23750
1000 +: $ 0.23250
10000 +: $ 0.22500
Stock 54000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A SI7619DN-T1-GE3 is an Single Metal-Oxide Semiconductor field-effect transistor (MOSFET). This type of transistor is used for many different applications, such as switching circuits, audio amplifiers, and power supplies. In addition to its general uses, it is also often used in power supply circuits and amplifier circuits.The SI7619DN-T1-GE3 is a single-channel MOSFET. It is a depletion-mode, normally-on field-effect transistor (FET). The term “normally-on” means that the default state of the transistor is on, and the input voltage needs to be higher than certain voltage to turn it off. The SI7619DN-T1-GE3 has two drain terminals, one source terminal, and one gate terminal. The gate terminal is used to control the flow of current between the drain and source terminals. When a voltage is applied to the gate terminal, it increases the electric field in the channel and results in a decrease in the current between the drain and source terminals. Conversely, if the voltage decreases, the current increases.Because of its wide range of uses, the SI7619DN-T1-GE3 is used in a variety of applications. It is commonly used in DC/DC converters, audio amplifiers, power suppliers, switching applications, and many other circuit applications. It is also used in automotive, aircraft, space, and medical applications.The SI7619DN-T1-GE3 has many advantages over its competitors. It has a low on-state resistance and a fast switching speed, making it ideal for high power and fast switching applications. It also has a low gate charge, making it efficient for low-power applications. It is also immune to electrostatic discharge (ESD) and radio frequency interference (RFI) which makes it reliable in noisy environments.In conclusion, the SI7619DN-T1-GE3 is an excellent power semiconductor device. It has a wide range of uses and features, making it the ideal choice for a variety of applications. Its low gate charge and low on-state resistance makes it ideal for high-power and fast switching applications, while its immunity to ESD and RFI makes it reliable in noisy environments. These features make the SI7619DN-T1-GE3 perfect for use in DC/DC converters, audio amplifiers, power supplies, and many other circuits.

The specific data is subject to PDF, and the above content is for reference

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