SI7620DN-T1-GE3

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The SI7620DN-T1-GE3 is a N-Channel enhancement-mode vertical DMOS (Double Diffused MOS) power transistor. It is specifically designed for low voltage, low power applications where high speed switching with high efficiency is necessary. It is suitable for use as a power switch in a variety of electronic circuits and applications, including power supply design, motor control circuits, switching regulators, and DC/DC converters.

The SI7620DN-T1-GE3 has a maximum drain current rating of 3A and a maximum drain-source voltage of 15V. It is constructed from silicon and its reliability is enhanced by the use of a heavily doped drain region. The device has a maximum junction temperature of +150°C, a maximum gate-source voltage of 15V, and a maximum drain-source on-state resistance of 11ohm.

The SI7620DN-T1-GE3 is a single N-channel Vertical DMOS field-effect transistor (FET). A FET is a type of transistor that is used to control the flow of current. Unlike regular Bipolar Junction Transistors, FETs don’t require a constant current source. Instead, the gate terminal of the FET acts as a valve that controls the flow of current across the drain-source terminals. This makes FETs ideal for applications where a variable current is required, such as switching power supplies or motor controllers.

The N-channel FET is designed to work with a positive voltage applied to its gate. When a positive voltage is applied, it creates an electric field that attracts electrons and allows them to move easily from the source terminal to the drain terminal, creating an electron current from drain to source. This current can be controlled by adjusting the gate voltage, allowing for a variable current based on the applied voltage.

The SI7620DN-T1-GE3 is an N-channel FET which has an on-state resistance (RDS(on)) of 11Ω. This is specifically designed for low voltage, low power applications. An RDS(on) of 11Ω means that it can operate with a maximum drain current of 3A and a drain-source voltage of 15V. This makes the device suitable for use in applications that require low power and high efficiency while still providing high speed switching.

In summary, the SI7620DN-T1-GE3 is an N-channel enhancement mode vertical DMOS power transistor designed for low voltage, low power applications. It has an RDS(on) of 11Ω, making it suitable for applications where high speed switching with high efficiency is necessary. The device is especially useful in applications such as power supply design, motor control circuits, switching regulators, and DC/DC converters.

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