SI7613DN-T1-GE3

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The SI7613DN-T1-GE3 is a high-performance and small-sized insulated gate field effect transistor (IGFET) designed for various applications including linear and logic circuit switching, pulsing and inversion. Built using the advanced 0.25 and 0.7 micrometer process, the SI7613DN-T1-GE3 is available in the lead free, halogen free and green product versions.

One of the advantages of the SI7613DN-T1-GE3 is its extremely low gate charge. This is enabled by the use of a Gate injection electrode technology, which allows the gate to be charged more quickly with less current. The device also features a low on-state resistance of 0.8 ohms and a maximum drain-source voltage of 80V. Its high frequency capability, consistently low gate threshold voltage, and low output capacitance make it ideal for switching applications demanding high speed and minimal power consumption.

The SI7613DN-T1-GE3 is a single-channel, Insulated Gate Field-Effect Transistor (IGFET) that is self-protected against transient events such as electrostatic discharge, transients, voltage spikes, and surges. It consists of a channel that forms a conductive pathway between its source and drain terminals when a minimal positive gate electric field is applied. It is a type of MOSFET, where the channel is insulated from the Gate by a thin oxide layer. As such, no direct connection between the Gate and Source is established and the channel current is only controlled by the amount of voltage applied to the Gate.

The device consists of a Junction Field Effect Transistor (JFET) connected in series to an insulated gate. This allows for a very low gate control voltage and a low operating voltage. The device can also handle a wide range of input signals, including AC signals, DC signals, and pulses of any frequency. As a result, the SI7613DN-T1-GE3 is capable of switching signals at a high frequency, with minimal power consumption.

The working principle of the SI7613DN-T1-GE3 is based on the fact that a small applied voltage to the Gate terminal can modulate the conductivity of the semiconductor material in between the Source and Drain terminals of the device. This modulation of the conductivity enables the device to control the output current as the Gate voltage is increased or decreased. The SI7613DN-T1-GE3 is capable of handling a variety of signal inputs, including digital or analog signals, and has the capacity to switch these signals at a high frequency with minimal power consumption.

The SI7613DN-T1-GE3 is suitable for a wide range of linear switching, pulse modulation, and inversion applications, such as automatic testing equipment, cellular base station power amplifiers, modem systems, driver circuits, and power controllers. It is also compatible with the most common insulation systems, including class B, class F, and class H. This makes it an ideal choice for a variety of low to medium power burden applications.

In summary, the SI7613DN-T1-GE3 is a high-performance, small-sized insulated gate field effect transistor (IGFET) designed for various applications including linear and logic circuit switching, pulsing and inversion. Its extremely low gate charge, high frequency capability, consistently low gate threshold voltage, low on-state resistance and low output capacitance make it ideal for switching applications demanding high speed and minimal power consumption. It is suitable for a wide range of linear switching, pulse modulation, and inversion applications, and is compatible with the most common insulation systems.

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