SI7674DP-T1-E3

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The SI7674DP-T1-E3 is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) suitable for low voltage application. The device is specifically designed as a power device for applications such as synchronous rectification, battery management and voice coil motor (VCM) control.

MOSFETs offer lower power loss than other power devices such as bipolar transistors or bi-directional thyristors. As such they are a popular choice for many low voltage and portable applications. The SI7674DP-T1-E3 in particular is a single P-channel depletion-mode MOSFET that has been optimized for low gate charge (Qg), low on-state (RDS(on)) resistance and minimal noise in common applications such as consumer electronics, automotive and industrial applications.

Application Field

The SI7674DP-T1-E3 is suitable for low voltage applications. Its low on-state resistance (RDS(on)) means that is able to regulate current to reduce power consumption in circuits, particularly when combined with low gate charge (Qg) offering further efficiency gains.

Common applications include synchronous rectification in power converters, battery management in lithium ion batteries and voice coil motor (VCM) control.

Working Principle

The SI7674DP-T1-E3 is a P-channel MOSFET meaning that it is able to draw a current from a power source, rather than pushing current into it as a N-channel MOSFET would. This makes it useful for applications such as synchronous rectification and battery management.

When the gate voltage of the MOSFET is sufficiently high, the MOSFET will be ‘on’, allowing current to flow from the drain to the source. The on resistance of the SI7674DP-T1-E3 is specified in the device data sheet as RDS(on) and is typically between 0.90Ω and 1.6Ω. As such it is described as a ‘low on-state resistance MOSFET’.

The ‘gate charge’ of a MOSFET is the amount of charge necessary to turn it on. The SI7674DP-T1-E3 has a very low gate charge allowing it to quickly switch on and off and thereby reducing power losses. The low gate charge also reduces the power requirement to control the MOSFET, allowing it to be used effectively in low voltage applications.

The SI7674DP-T1-E3 also offers a low noise performance due to the low gate charge and low on resistance. This is particularly important in applications such as VCM control where the MOSFET must switch on and off at a very high frequency with minimal noise.

In conclusion, the SI7674DP-T1-E3 is a single P-Channel MOSFET designed for low voltage applications such as synchronous rectification, battery management and voice coil motor (VCM) control. Its low gate charge and low on resistance allow it to efficiently switch on and off with minimal power losses, while its low noise performance is beneficial for applications requiring a high switching frequency.

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