SI7615CDN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7615CDN-T1-GE3TR-ND

Manufacturer Part#:

SI7615CDN-T1-GE3

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 35A POWERPAK1212
More Detail: P-Channel 20V 35A (Tc) 33W (Tc) Surface Mount Powe...
DataSheet: SI7615CDN-T1-GE3 datasheetSI7615CDN-T1-GE3 Datasheet/PDF
Quantity: 6000
1 +: $ 0.15000
10 +: $ 0.14550
100 +: $ 0.14250
1000 +: $ 0.13950
10000 +: $ 0.13500
Stock 6000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
Series: TrenchFET® Gen III
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7615CDN-T1-GE3 is a type of insulated-gate bipolar transistor (IGBT) that has multiple applications in the electronics industry. It is a three-terminal device, with the source and drain (gate) leads being connected to the collector and emitter of the device. This makes it ideal for use as an amplifier, switch, or other control device. The SI7615CDN-T1-GE3 is a high voltage and power semiconductor device, making it suitable for use in a wide range of applications from power tools to automotive and industrial components.The working principle of the SI7615CDN-T1-GE3, as with other IGBTs, is based on the application of a bias voltage to the gate-drain junction. When the gate voltage is applied, the electrons in the gate region are attracted to the collector-emitter junction, creating a channel of carriers. This channel of carriers forms the active region of the device, allowing it to be used as a switch or an amplifier. This process is known as carrier injection.The SI7615CDN-T1-GE3 is suitable for use in many different types of applications and has a wide range of features that make it a great choice for various projects. The features include an extended temperature range (of -40°C to +125°C), a low gate voltage drive requirement, a high-speed switching capability (up to 4 kHz), and a high level of energy savings (up to 95%). It also has a wide range of gate-voltage ranges, including -40 V to +40 V, enabling it to be used in many different applications.The SI7615CDN-T1-GE3 is an ideal device for applications such as motor control, DC-DC converters, lighting control, power supplies, automotive systems, and HVAC. Its high-speed switching capability makes it well-suited for higher frequency applications such as data converters, switching networks, and communication systems. Its ability to operate at a wide range of temperatures allows it to be used in many different types of environments, including extreme high and low temperatures. The SI7615CDN-T1-GE3 is a high voltage, power semiconductor device. It has a low gate voltage drive requirement, a high-speed switching capability, and a high level of energy savings. It is suitable for use in many different types of applications, including motor control, DC-DC converters, lighting control, power supplies, automotive systems, and HVAC. It is a great choice for projects that require high speed, high efficiency, and reliable operation in hostile conditions.

The specific data is subject to PDF, and the above content is for reference

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