SI7615DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7615DN-T1-GE3TR-ND

Manufacturer Part#:

SI7615DN-T1-GE3

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 35A 1212-8
More Detail: P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface...
DataSheet: SI7615DN-T1-GE3 datasheetSI7615DN-T1-GE3 Datasheet/PDF
Quantity: 3000
1 +: $ 0.53000
10 +: $ 0.51410
100 +: $ 0.50350
1000 +: $ 0.49290
10000 +: $ 0.47700
Stock 3000Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7615DN-T1-GE3 is a N-Channel MOSFET which is a type of transistor used in electronic circuits. The MOSFET device, being a type of field-effect transistor (FET), consists of a semiconductor material with four terminals with two of them being an input voltage gate and the other two the output drain and source. It is a type of electronic switch used to control the flow of current between the drain and source terminals.

The SI7615DN-T1-GE3 is an N-channel MOSFET which has a drain-source breakdown voltage of 60V and a continuous drain current of 7.3A. It has an on resistance of 28mΩ. The device is a single N-channel, enhancement mode MOSFET which has a low on resistance and a low gate threshold voltage. It is suitable for use in various applications such as DC/DC converters, lighting circuits, power management, and power switching applications. It is also ideal for use in consumer electronics, automotive applications, and portable devices.

The working principle of the SI7615DN-T1-GE3 is based on the electrical field generated by the input voltage applied to the gate terminal of the device. When the gate voltage is increased, the electric field generated by it will allow the current to flow from the source to the drain terminal. On the other hand, when the gate voltage is decreased, the electric field will reduce, and the current flow from the source to the drain will be blocked. This is known as the enhancement mode of operation of the MOSFET.

The SI7615DN-T1-GE3 is ideal for applications which require high switching speed, precise control of drain current, high current carrying capacity, and low power consumption. It has a fast switching speed and is capable of carrying higher current compared to other types of MOSFETs such as P-channel MOSFETS. It also has high efficiency and reliability, which makes it suitable for many different applications.

Overall, the SI7615DN-T1-GE3 is a high performing, low power consumption MOSFET which is suitable for a wide range of applications. It is highly reliable and efficient, and offers precise control of drain current. It is an ideal device for many applications including DC/DC converters, lighting circuits, power management, and power switching applications. It is also perfect for use in consumer electronics, automotive applications, and portable devices, since it offers a high immunity to electrostatic discharge, making it reliable and safe for use in these applications.

The specific data is subject to PDF, and the above content is for reference

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