
Allicdata Part #: | SI7615DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7615DN-T1-GE3 |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 35A 1212-8 |
More Detail: | P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 0.53000 |
10 +: | $ 0.51410 |
100 +: | $ 0.50350 |
1000 +: | $ 0.49290 |
10000 +: | $ 0.47700 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 183nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7615DN-T1-GE3 is a N-Channel MOSFET which is a type of transistor used in electronic circuits. The MOSFET device, being a type of field-effect transistor (FET), consists of a semiconductor material with four terminals with two of them being an input voltage gate and the other two the output drain and source. It is a type of electronic switch used to control the flow of current between the drain and source terminals.
The SI7615DN-T1-GE3 is an N-channel MOSFET which has a drain-source breakdown voltage of 60V and a continuous drain current of 7.3A. It has an on resistance of 28mΩ. The device is a single N-channel, enhancement mode MOSFET which has a low on resistance and a low gate threshold voltage. It is suitable for use in various applications such as DC/DC converters, lighting circuits, power management, and power switching applications. It is also ideal for use in consumer electronics, automotive applications, and portable devices.
The working principle of the SI7615DN-T1-GE3 is based on the electrical field generated by the input voltage applied to the gate terminal of the device. When the gate voltage is increased, the electric field generated by it will allow the current to flow from the source to the drain terminal. On the other hand, when the gate voltage is decreased, the electric field will reduce, and the current flow from the source to the drain will be blocked. This is known as the enhancement mode of operation of the MOSFET.
The SI7615DN-T1-GE3 is ideal for applications which require high switching speed, precise control of drain current, high current carrying capacity, and low power consumption. It has a fast switching speed and is capable of carrying higher current compared to other types of MOSFETs such as P-channel MOSFETS. It also has high efficiency and reliability, which makes it suitable for many different applications.
Overall, the SI7615DN-T1-GE3 is a high performing, low power consumption MOSFET which is suitable for a wide range of applications. It is highly reliable and efficient, and offers precise control of drain current. It is an ideal device for many applications including DC/DC converters, lighting circuits, power management, and power switching applications. It is also perfect for use in consumer electronics, automotive applications, and portable devices, since it offers a high immunity to electrostatic discharge, making it reliable and safe for use in these applications.
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