SI7636DP-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.9W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5600pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	4 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	17A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI7636DP-T1-GE3 is a general-purpose surface-mount (SMT) silicon-controlled rectifier (SCR) with advanced features that make it ideal for use in many power applications. The device features a maximum forward current of 10 A, a maximum device peak current of 30 A, and an on-state voltage drop of 1.0 V at 1.2 A.The SCR can be used in a wide range of power applications such as power switching, over-voltage protection, and load-share control. It is also suitable for use as a main power switch in RC hobby applications, where safety and stability are of primary importance. The SI7636DP-T1-GE3 is a four-terminal N-Channel MOSFET with P-Channel companion, which has three operating modes: linear, non-linear, and analog. It has an on-resistance of less than 3 mΩ for linear and non-linear operations, and an on-resistance of 10 mΩ for analog operations. In addition, the device has a thermal shutdown protection of 160 °C.The SI7636DP-T1-GE3 features a symmetrical gate structure that makes it tolerant of high gate-source voltages. This results in a low gate drive requirement and a low gate threshold voltage. The device also has a drain-to-source resistance of 0.1 Ω at temperatures up to 125 °C and a junction-to-ambient thermal resistance of 2 °C/W.The device works on the principle of high-efficiency current-switching, which makes it well suited for applications where the load requires switching current using a high-current transistor. When the gate voltage of the device is greater than the threshold voltage, the MOSFET will switch into its conducting state and can supply a steady current.The SI7636DP-T1-GE3 is suitable for a wide range of switching applications in the automotive, industrial, and consumer sectors. It can be used in automotive powertrain, automotive lighting, and DC motor control applications. It is also well suited for use in industrial applications such as air conditioners, beverage machines, white goods, and power tools. The device is ideal for consumer applications requiring high current switching such as lawnmowers, lawn trimmers, chainsaws, generators, and water pumps.In summary, the SI7636DP-T1-GE3 is a general-purpose surface-mount (SMT) silicon-controlled rectifier (SCR) with advanced features that make it ideal for use in many power applications. It is suitable for a wide range of switching applications in the automotive, industrial, and consumer sectors and features a symmetrical gate structure with high-efficiency current-switching capabilities that makes it well suited for high current applications.

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