SI7664DP-T1-E3

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The SI7664DP-T1-E3 is a single N-Channel depletion-mode MOSFET made by Vishay Semiconductors. It is a power and into-the-light semiconductor device which is designed to be used in a variety of applications where only small amounts of current and voltage are needed.

A depletion-mode MOSFET is a type of metal-oxide semiconductor field-effect transistor (MOSFET) that operates when its gate-source voltage is below the threshold voltage. This type of transistor is used in some designs due to its capability of switching small currents at very low voltages. This allows the SI7664DP-T1-E3 to be very useful in high-frequency switching applications, such as in data transmission circuits and in armature circuits of DC motor drives. It can also be used in logic circuits to quickly switch small currents from one circuit to another with low power consumption.

The SI7664DP-T1-E3 has a drain current of 0.07A and a drain-source voltage of 20V. It has a maximum on-state resistance of 0.015Ω and a Vgs threshold voltage of -4V, which means that it can be used in applications that require low voltage operation. It also has a maximum operating temperature of 125°C and an RDS-on of only 0.3Ohm.

The primary applications for the SI7664DP-T1-E3 are in high frequency switching applications, motor drives, logic circuits and data transmission circuits. In these applications, it is used to switch small currents between two nodes with low power consumption and high speed. It is also used in power management systems and other low voltage applications. It is a very reliable and efficient device capable of switching small currents at low voltages.

The SI7664DP-T1-E3 is designed to operate at very low gate-source voltage levels and is therefore capable of switching small currents at low voltages. The device works by applying a voltage to the gate terminal, creating an electric field in the gate region which modulates the current flow. A Vdd voltage must be applied to the drain side of the transistor to activate it, which is controlled by the gate-source voltage. When the voltage applied to the gate-source is low, the transistor will be in its off-state, meaning that there will be no current flow between the drain and the source. When a higher voltage is applied to the gate-source, the transistor will become active and current will be able to flow between the drain and source terminals.

The SI7664DP-T1-E3 is a reliable and efficient component which is used in many high frequency switching applications, motor drives, logic circuits and data transmission circuits due to its low voltage operation and its capability of quickly switching between two nodes. It is an ideal component for those looking for a reliable and efficient device capable of switching currents at low voltages.

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