| Allicdata Part #: | SI7634BDP-T1-GE3TR-ND |
| Manufacturer Part#: |
SI7634BDP-T1-GE3 |
| Price: | $ 0.74 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 40A PPAK SO-8 |
| More Detail: | N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface M... |
| DataSheet: | SI7634BDP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.74000 |
| 10 +: | $ 0.71780 |
| 100 +: | $ 0.70300 |
| 1000 +: | $ 0.68820 |
| 10000 +: | $ 0.66600 |
| Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5W (Ta), 48W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3150pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI7634BDP-T1-GE3 is a transistor that is used as a part of a larger system. It is a single-gate transistor with two terminals (source and drain) and one gate. The transistor is part of the wide family of metal-oxide-semiconductor field-effect transistors (MOSFETs).
MOSFETs are voltage-controlled devices that use a thin insulating layer of oxide to keep charge carriers (positive and negative) away from each other, while controlling how they are sent through the transistor. This control is provided by applying a voltage to the gate, which opens and closes the gate, allowing charges to move through one side (source) to the other (drain).
A key attribute of the SI7634BDP-T1-GE3 is its low threshold voltage (Vth). Most transistors require a certain voltage before they start working, but this particular transistor starts working as low as 3V. This makes it very suitable for applications where low power is required.
The source-to-drain breakdown voltage (Vdss) is another important parameter of the SI7634BDP-T1-GE3. It determines the maximum voltage the transistor can handle. The SI7634BDP-T1-GE3 has a Vdss of 55V.
This transistor is ideal for applications such as AC/DC switching, lighting control, and motor control. Its wide range of features make it suitable for a variety of different applications in both consumer and industrial electronics.
One of the most common applications of the SI7634BDP-T1-GE3 is for switch mode power supplies (SMPS). SMPS require transistors with low voltage thresholds and high breakdown voltages. The SI7634BDP-T1-GE3 has these characteristics and is therefore an ideal choice for SMPS applications.
Another application of the SI7634BDP-T1-GE3 is in LED drivers. LED drivers require transistors with low power consumption and good switching speeds. The SI7634BDP-T1-GE3 meets these requirements and is therefore a suitable choice for LED driver applications.
The SI7634BDP-T1-GE3 is also often used in motor control systems. Its high breakdown voltage and low-threshold voltage make it suitable for motor control systems, as the motor requires high currents and low voltages.
In conclusion, the SI7634BDP-T1-GE3 is a single-gate MOSFET transistor that is suitable for a wide range of applications. Its low threshold voltage and high breakdown voltage make it ideal for AC/DC switching, lighting control, and motor control applications. It is also an ideal choice for switch mode power supplies, LED drivers, and motor control systems.
The specific data is subject to PDF, and the above content is for reference
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SI7634BDP-T1-GE3 Datasheet/PDF