SI7625DN-T1-GE3

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The SI7625DN-T1-GE3 is a field-effect transistor (FET) that provides low on-resistance and fast switching, ideal for switching applications such as on/off control, amplifier protection and motor control. It is a single N-channel enhancement-mode FET, which means that the current only flows when a positive gate-source voltage is applied.

The device consists of a N channel silicon MOS gate and a N channel channel and a N channel self aligned gate structure. The gate drive of the device is typically single ended and requires a bias voltage. The gate structure is self-aligned to the source lead and drain region, forming an integrated structure.

The most important feature of the SI7625DN-T1-GE3 is its low on-resistance and fast switching. Its on-resistance is up to 600 mExc (measured at the drain terminal), and its switching speed is up to 5 ns. The device is also extremely robust, with a rated avalanche energy of up to 10 mJ.

The SI7625DN-T1-GE3 is designed for a wide range of applications, ranging from high speed switching and amplification, to motor control and battery protection. The device is suitable for use in many contexts, from low voltage to high voltage circuits, from high frequency to low frequency circuits, and from automotive to industrial applications.

The device is typically used for on/off control, amplification protection, and motor control. In on/off control applications, the SI7625DN-T1-GE3 can be used as a switch to control the power to a load. In amplifier protection, it can be used to protect the amplifier from being overdriven and to reduce the output distortion. In motor control applications, it can be used to control the speed of a motor.

The device works by applying a positive gate-source voltage to the gate terminal, which opens a current path between the source and the drain terminals. The amount of current that flows through the device is determined by the amount of gate-source voltage applied. The gate-source voltage can be adjusted to control the amount of current that flows through the device and therefore control the speed of the motor or the voltage level of the load.

The SI7625DN-T1-GE3 is an ideal choice for those looking for an efficient, reliable and low-cost solution for their switching or protection needs. It has a low on-resistance and fast switching speed, which make it suitable for applications ranging from high speed switching, to motor control and protecting amplifiers from being overdriven. The device is also extremely robust, with a rated avalanche energy of up to 10 mJ. This makes it suitable for use in a wide range of applications, from automotive to industrial.

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