Allicdata Part #: | SI7674DP-T1-GE3-ND |
Manufacturer Part#: |
SI7674DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 40A PPAK SO-8 |
More Detail: | N-Channel 30V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface... |
DataSheet: | SI7674DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5910pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7674DP-T1-GE3 is a type of Field-Effect Transistor (FET) specifically designed for use in industrial and commercial applications. It is a single-channel N-channel MOSFET with a high-power on-resistance rating of up to 9.3 ohms, making it suitable for a variety of high-current applications. As a power transistor, it can be used in power supply applications, motor control applications, and most other high-current switching applications. In this article, we will discuss the application field of the SI7674DP-T1-GE3 and its working principle.
Application Field of SI7674DP-T1-GE3
The SI7674DP-T1-GE3 is designed for use in high-current industrial and commercial applications. This range of applications includes motor control applications, such as servo motors and switched reluctance motors, and also power supply applications, such as LCD monitors and power supply systems. It can also be used in HVAC systems, lighting systems, and many other high-power switching applications. Due to its high on-resistance rating, it can also be used as a high-power linear amplifier in some applications.
Working Principle of SI7674DP-T1-GE3
The SI7674DP-T1-GE3 is a single-channel N-channel MOSFET, meaning that its operation is based on the principles of field effect transistors. In the simplest terms, when an electric field is applied to the channel of the MOSFET, the channel is “opened” and current can pass through. Conversely, when the electric field is removed, the channel is “closed” and current cannot pass through. This is how the SI7674DP-T1-GE3 can be used as a high-current switch, allowing a user to control the flow of current with the application of an electric field.
The SI7674DP-T1-GE3 is a high-power MOSFET, meaning that it is capable of handling higher currents than lower power MOSFETs. This is due to its high on-resistance, which allows a greater amount of current to pass through the channel with less resistance. This makes the SI7674DP-T1-GE3 ideal for high-current applications, such as motor control and power supply applications.
Conclusion
The SI7674DP-T1-GE3 is a single-channel N-channel MOSFET designed for use in high-current industrial and commercial applications. Its high-power on-resistance rating makes it suitable for a variety of applications, such as motor control, power supply, HVAC systems, and lighting systems. As a power transistor, it can be used as a high-power linear amplifier in some applications. Its operation is based on the principles of Field-Effect Transistors, allowing a user to control the flow of current through the application of an electric field.
The specific data is subject to PDF, and the above content is for reference
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