SI7621DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7621DN-T1-GE3 is a single N-channel depletion-mode MOSFET. It is one of many transistors available on the market, and it can be used in a variety of applications, from simple power control to more complex digital logic circuit designs. The SI7621DN-T1-GE3 has some unique features that distinguishes it from other transistors. It features an ultra-low Rdson, extremely low off-state leakage current, and a low threshold voltage.

The main applications of the SI7621DN-T1-GE3 are in switching and power control applications. It can handle a wide range of power levels, up to 10A peak in pulsed mode and 3A in continuous mode. It is well suited for use in low-power switching circuits, such as those used in motor control systems and in battery-powered devices. Its low cost and small overall size make it an attractive option for many applications.

The SI7621DN-T1-GE3 is a depletion mode MOSFET. This means that the transistor is normally "off" when not activated. When a voltage is applied to the gate, the current flowing through the transistor is increased. The transistor is capable of both enhancement and depletion operating modes, with the second one being the normal operating mode. Specifically, it is a N-Channel depletion-mode MOSFET, meaning that the conduction is along the N type path rather than the P type.

The working principle of the SI7621DN-T1-GE3 is relatively simple. When a voltage is applied to the gate, it causes the N-shaped channel to fill with electrons, forming a low resistance path and allowing current to flow through the transistor. The amount of current allowed depends on the voltage applied, and the transistor will continue to conduct until the voltage is removed. The amount of current that can be conducted is limited by the RDSON (on-state resistance) of the device.

The SI7621DN-T1-GE3 is a single N-channel MOSFET, which makes it well suited for applications where low on-resistance and minimal space are desired. It has a low RDSON, making it ideal for low power switching circuits, such as those used in battery-powered devices and motor control circuits. It also has a low threshold voltage, making it suitable for digital logic circuits. In addition, it has an ultra-low off-state leakage current, making it ideal for keeping a low power profile in portable devices.

In summary, the SI7621DN-T1-GE3 is an N-channel depletion-mode MOSFET that can be used in switching and power control applications. It has an ultra-low Rdson, extremely low off-state leakage current and a low threshold voltage, making it suitable for a wide range of applications. It is well suited for use in low-power switching circuits, such as those used in motor control systems and in battery-powered devices. In sum, the device’s small size and low cost make it an attractive option for many applications.

The specific data is subject to PDF, and the above content is for reference