SI7634BDP-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7634BDP-T1-E3-ND

Manufacturer Part#:

SI7634BDP-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 40A PPAK SO-8
More Detail: N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface M...
DataSheet: SI7634BDP-T1-E3 datasheetSI7634BDP-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7634BDP-T1-E3 is a high-speed, bidirectional, dual-channel normal-off, N-channel Trench FET device. It is designed for high-performance applications that require fast switching times, low on-resistance, and low input capacitance. It is suitable for a wide range of applications, including high-speed communications, power management, and motor control. This device is a great choice for applications that require a fast, reliable, and low-cost solution.

The SI7634BDP-T1-E3 is designed to be a highly efficient switch, providing fast switching speeds, low on-resistance, and low input capacitance. Its small size and high speed make it ideal for applications that require a fast and reliable solution. Its low on-resistance and low input capacitance make it suitable for a wide range of applications. Its low price and long lifecycle make it an ideal choice for high-end applications.

The SI7634BDP-T1-E3 consists of two N-Channel Trench FETs that are connected in parallel, each with its own switched gate. When a gate signal is applied, the corresponding FET will switch on and off accordingly. The device is designed to turn on and off quickly, and can be used as a high-performance, low-power switch. Because the two FETs are connected in parallel, the device can provide higher efficiency than a single FET.

The SI7634BDP-T1-E3 has a variety of applications, ranging from high-speed communications to power management and motor control. In high-speed communications, the device can be used as an ESD protection device. In power management applications, it can be used as a low-loss switch between two power supplies. In motor control applications, it can be used as a high-speed, low-loss switching device between the controller and the motor.

The working principle of the SI7634BDP-T1-E3 is quite straightforward. The device is connected between two power sources and consists of two N-Channel Trench FETs. When a gate signal is applied, the corresponding FET will switch on and off accordingly. The device is designed to turn on and off quickly, and can be used as a high-performance, low-power switch.

The SI7634BDP-T1-E3 is an excellent choice for applications that require a fast, reliable, and low-cost solution. Its small size and high speed make it ideal for applications that require a fast and reliable solution. Its low on-resistance and low input capacitance make it suitable for a wide range of applications. Its low price and long lifecycle make it an ideal choice for high-end applications.

The specific data is subject to PDF, and the above content is for reference

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