Allicdata Part #: | SI7634BDP-T1-E3-ND |
Manufacturer Part#: |
SI7634BDP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 40A PPAK SO-8 |
More Detail: | N-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface M... |
DataSheet: | SI7634BDP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3150pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7634BDP-T1-E3 is a high-speed, bidirectional, dual-channel normal-off, N-channel Trench FET device. It is designed for high-performance applications that require fast switching times, low on-resistance, and low input capacitance. It is suitable for a wide range of applications, including high-speed communications, power management, and motor control. This device is a great choice for applications that require a fast, reliable, and low-cost solution.
The SI7634BDP-T1-E3 is designed to be a highly efficient switch, providing fast switching speeds, low on-resistance, and low input capacitance. Its small size and high speed make it ideal for applications that require a fast and reliable solution. Its low on-resistance and low input capacitance make it suitable for a wide range of applications. Its low price and long lifecycle make it an ideal choice for high-end applications.
The SI7634BDP-T1-E3 consists of two N-Channel Trench FETs that are connected in parallel, each with its own switched gate. When a gate signal is applied, the corresponding FET will switch on and off accordingly. The device is designed to turn on and off quickly, and can be used as a high-performance, low-power switch. Because the two FETs are connected in parallel, the device can provide higher efficiency than a single FET.
The SI7634BDP-T1-E3 has a variety of applications, ranging from high-speed communications to power management and motor control. In high-speed communications, the device can be used as an ESD protection device. In power management applications, it can be used as a low-loss switch between two power supplies. In motor control applications, it can be used as a high-speed, low-loss switching device between the controller and the motor.
The working principle of the SI7634BDP-T1-E3 is quite straightforward. The device is connected between two power sources and consists of two N-Channel Trench FETs. When a gate signal is applied, the corresponding FET will switch on and off accordingly. The device is designed to turn on and off quickly, and can be used as a high-performance, low-power switch.
The SI7634BDP-T1-E3 is an excellent choice for applications that require a fast, reliable, and low-cost solution. Its small size and high speed make it ideal for applications that require a fast and reliable solution. Its low on-resistance and low input capacitance make it suitable for a wide range of applications. Its low price and long lifecycle make it an ideal choice for high-end applications.
The specific data is subject to PDF, and the above content is for reference
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