Allicdata Part #: | SSM6N48FULF-ND |
Manufacturer Part#: |
SSM6N48FU,LF |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F SOT-363 S-MOS (LF) TRAN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 100mA (Ta) 300... |
DataSheet: | SSM6N48FU,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05796 |
Series: | U-MOSIII |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Rds On (Max) @ Id, Vgs: | 3.2 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15.1pF @ 3V |
Power - Max: | 300mW |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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The SSM6N48FU,LF is a type of transistor array with multiple field effect transistors (FETs) that can be used in various applications. FETs are multiple component transistors that are used for a variety of electronic devices, ranging from computers to mobile phones. This type of transistor is known for its high switching speed, low power consumption, and wide voltage range. It is also praised for its reliability and long life cycle.
The SSM6N48FU,LF is an array of four N-channel MOSFETs with one extra driver transistor. This type of transistor array can be used for a variety of applications such as power conversion, voltage regulation, and current gain. It can be used in circuits for switching, amplifying, and controlling various signals and voltages.
When speaking of FETs, the most important factor is the working principle behind it. Generally, FETs operate through four processes: gate-charge, threshold, bias, and drain. The gate-charge process is responsible for preparing the FET by applying the voltage to the gate. The threshold process is the actual switching process and involves an inversion layer at the junction between the source and the drain. The bias process is needed to maintain the current in the circuit and the drain process is the one responsible for activating and putting the transistor into an active state.
The working principles behind the SSM6N48FU,LF, as mentioned earlier, involve four processes. The first one is the gate-charge stage that consists in applying the voltage to the gate of the transistor. The threshold process is then responsible for inverting the layer between the source and the drain. The third stage is the bias process that maintains the current in the circuit and finally, the drain stage activates the transistor and puts it in the active state.
All in all, the SSM6N48FU,LF is a type of transistor array composed of four N-channel MOSFETs and one extra driver transistor. This type of transistor array can be used for a variety of applications ranging from power conversion, voltage regulation, and current gain. Furthermore, its working principle consists of four processes: gate-charge, threshold, bias, and drain. As the SSM6N48FU,LF provides high switching speed, low power consumption, and a wide voltage range, it is praised for its reliability and long life cycle.
The specific data is subject to PDF, and the above content is for reference
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