SSM6P16FE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | SSM6P16FE(TE85LF)CT-ND |
Manufacturer Part#: |
SSM6P16FE(TE85L,F) |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 20V 0.1A ES6 |
More Detail: | P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM6P16FE(TE85L,F) Datasheet/PDF |
Quantity: | 3922 |
1 +: | $ 0.39690 |
10 +: | $ 0.27972 |
100 +: | $ 0.18390 |
500 +: | $ 0.10865 |
1000 +: | $ 0.08358 |
Series: | π-MOSVI |
Packaging: | Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 11pF @ 3V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | ES6 |
Package / Case: | SOT-563, SOT-666 |
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A SSM6P16FE(TE85L,F) is a compact, dual-channel, high-performance low-voltage FET (Field Effect Transistor) that is suitable for use as a general-purpose power switch. The SSM6P16FE is a versatile FET with many applications in various types of industrial and consumer electronics.
The SSM6P16FE is made from a high-quality semiconductor material that offers excellent electrical properties. This type of FET is designed to provide electrical control over the voltage and current flowing through the device. The device can be used for switching of large currents, as well as for power conversion, signal manipulation and as a buffer for amplifiers and other signal-processing circuits. The SSM6P16FE is also capable of handling a wide range of operating temperatures and ambient conditions.
The SSM6P16FE is designed to operate in a symmetrical mode, which is ideal for many applications. This mode ensures that the FET operates in the most efficient and reliable way. The device features a split-gate design that simplifies the connection of a variety of components. The FET is also protected against over-temperature, over-voltage and over-current operation.
The SSM6P16FE is ideal for use in applications that require a fast switching time and low heat dissipation. The FET\'s small size makes it suitable for handheld electronics, and its low-on resistance makes it ideal for high-power switching applications such as motor control or power line switching. The SSM6P16FE has also been used as a switching element in audio and video circuits.
The working principle of a FET is based on the conduction of charge carriers between two electrodes. When a voltage is applied between the two electrodes, a small electric current flows through the FET, causing it to conduct. This in turn causes the voltage applied to the gate of the FET to change, which changes the electrical properties of the transistor. The main role of the FET is to amplify changes in the voltage applied to its gate.
The SSM6P16FE has a low-voltage rating and is therefore suitable for use in many applications that require low power. The device is designed to withstand a range of ambient temperatures, making it suitable for use in both indoor and outdoor environments. The device is also robust enough to withstand shock, vibration and other typical environmental conditions.
In conclusion, the SSM6P16FE is a versatile, low-voltage FET designed for a variety of applications. The device\'s symmetrical mode provides excellent electrical control, and the device can operate at a wide range of temperatures and other extreme conditions. Its split-gate design makes it an ideal choice for a variety of high-power switching applications, and its small size makes it suitable for use in a variety of handheld and portable electronics.
The specific data is subject to PDF, and the above content is for reference
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