SSM6N68NU,LF Allicdata Electronics
Allicdata Part #:

SSM6N68NULFTR-ND

Manufacturer Part#:

SSM6N68NU,LF

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: SMALL LOW RON DUAL NCH MOSFETS H
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 4A (Ta) 2W (Ta...
DataSheet: SSM6N68NU,LF datasheetSSM6N68NU,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09085
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-UDFN (2x2)
Description

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SSM6N68NU,LF transistors are used in various applications. These devices are typically much smaller in size than most other transistors, while offering similar or superior performance. Because of their small size, they are often used where space is limited, such as in consumer electronics, automotive systems, and computer designs. They are also used in power converters and converters for medical, telecommunications and aerospace applications.

The SSM6N68NU,LF transistor is an array of Field Effect Transistors (FETs). The FET is a voltage-controlled transistor and can be used either as a series or shunt device. It is essentially a transistor with a gate terminal to control the device, which is usually placed between the drain and source terminals. When a voltage is applied to the gate terminal, it will gate the flow of current between the drain and source terminals. This gating action is used to control the current flow and the amount of voltage being delivered to the device.

The SSM6N68NU,LF Array FET is different than the standard FET in that it contains multiple FETs in a package. This allows the FETs to be able to be connected in various configurations to get different performance from the device. The FETs are typically arranged in a series-parallel design, which allows for better power control compared to a single FET. In addition, the FETs within the array can be individually controlled and configured for specific electrical characteristics to meet the needs of the application.

A key feature of the SSM6N68NU,LF transistor is the ability to handle high surge currents and high reverse voltages. This is due to the use of thicker gate material in the device, which helps to protect the device from overvoltage and current spikes. This makes the FET arrays ideal for applications in which high current may be needed. The FET array also has lower conduction losses and better switching speeds than standard FETs, making them desirable in many high-speed applications.

The SSM6N68NU,LF applications can include a variety of switching, amplifying, and isolating applications. Examples of applications that use the FET array include power management in medical device designs, automobile systems and the deployment of telecommunications networks. The FET array is often used in power converters, power supplies, and switching regulators, to both switch and regulate the flow of power.

The working principle of the SSM6N68NU,LF FET array is similar to other FETs. When a voltage is applied to the gate terminal, the current that flows between the source and drain terminals is controlled by the voltage. This is because the voltage changes the polarization of the channel, which in turn affects the amount of current that is allowed to flow between the terminals. The current that is allowed to flow depends on the size and shape of the channel, which is controlled by the voltage.

The SSM6N68NU,LF FET array is a very versatile device and can be used in a variety of applications where space limitations, high current, or high reverse voltages require special consideration. The FET array provides excellent power control, lower power losses, and faster switching speeds, making it an excellent choice for many power supply, switching and amplifying applications.

The specific data is subject to PDF, and the above content is for reference

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