Allicdata Part #: | SSM6K403TULFTR-ND |
Manufacturer Part#: |
SSM6K403TU,LF |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 4.2A |
More Detail: | N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount U... |
DataSheet: | SSM6K403TU,LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.09563 |
Series: | U-MOSIII |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 3A, 4V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 16.8nC @ 4V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | UF6 |
Package / Case: | 6-SMD, Flat Leads |
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The SSM6K403TU,LF belongs to a class of transistors known as FETs (Field-Effect Transistors) and is a single MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). A FET is a type of transistor that operates on the principle of an electric field and generally has two main terminals - the source and the drain. The basic principle behind the functioning of a FET is the use of voltage to control the current flow between the source and the drain. This voltage is referred to as the gate voltage and is applied to the gate terminal of the FET.
When the gate voltage is applied, it creates a strong electric field in the channel between the source and the drain. This in turn creates a region between the source and the drain known as the "depletion region" and causes the current to be limited. When the voltage is increased, the depletion region becomes larger, further limiting the current in the channel. Conversely, when the voltage is decreased, the depletion region becomes smaller, allowing more current to flow through the channel.
The SSM6K403TU,LF MOSFET is a single N-type FET, meaning that it uses an N-type silicon material (also known as an N-channel MOSFET) to form the channel between the source and the drain. N-type MOSFETs are often used in digital logic applications, such as in integrated circuits and microcontrollers, because they can be used to achieve fast switching times and allow high levels of integration. The SSM6K403TU,LF is particularly useful for digital logic applications due to its low on-resistance and its low parasitics. This MOSFET can also be used in integrated circuits to switch multiple high voltage, low current circuits.
Apart from being used in digital logic applications, the SSM6K403TU,LF MOSFET can also be used in high-power applications such as power management and motor control. This type of MOSFET is able to handle high currents and high voltages, making it ideal for applications such as switching AC power and controlling the speed of motors. The MOSFET can also be used in sensing and signal conditioning applications such as in contactless sensors and position sensors.
In summary, the SSM6K403TU,LF MOSFET is a single N-type Field-Effect Transistor with a low on-resistance and low parasitics. It is typically used in digital logic applications due to its fast switching times but it can also be used in high-power applications such as motor control and power management. When used correctly, it can help facilitate faster switching, higher integration, improved efficiency, and better control.
The specific data is subject to PDF, and the above content is for reference
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