SSM6J214FE(TE85L,F

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The SSM6J214FE(TE85L,F is a P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a single gate. It is typically used for low frequency, high current applications such as DC motors, small appliances, power supplies, and power switching. They are commonly used in power supplies, small motor drives, or RF amplifiers.

This device is designed as an enhanced “green” transition mode power MOSFET with tight thermal stability, low on-state resistance, and low gate charge. The SSM6J214FE(TE85L,F MOSFET has an ultra-thin body and a special trench embedded technology to reduce on-state resistance (Rds(on)).

It has a maximum drain-source voltage rating of 55V and a maximum drain current rating of 14A. The gate-source voltage rating is -2V to 30V, with a maximum gate threshold voltage of 1.2V and a maximum gate-source charge of 130nC. This device is also available in a surface mount package.

The main advantages of the SSM6J214FE(TE85L,F MOSFET includes high-speed switching, low Rds(on), high breakdown voltage, and low gate charge. The device also has an ultra-thin body to reduce on-state resistance. The device has a very low power dissipation, which makes it suitable for low power applications.

The working principle of the SSM6J214FE(TE85L,F MOSFET is based on the basic four-terminal FET principle. The junction between the gate and the source is called the drain-source channel, which is formed by applying a voltage between the gate and the source, thus controlling the flow of current. When the voltage applied between the gate and the source is low, the flow of current is blocked, and when the voltage is high, the current flow is increased.

The device can be used in a wide range of applications. In power supplies, it can be used as a switch to control the on and off states of the power supply and regulate the current. In low-power motor drives, the device can be used to control the speed and direction of the motor. It can also be used in RF amplifiers to reduce noise. The SSM6J214FE(TE85L,F MOSFET is also suitable for low power, automotive applications such as battery management systems.

In conclusion, the SSM6J214FE(TE85L,F MOSFET is a single gate P-Channel MOSFET that is designed for low frequency, high current applications. Its main advantages are its high-speed switching, low Rds(on) and gate charge, low power dissipation, and its ultra-thin body for reducing on-state resistance. It is mainly used in power supplies, motor drives, and RF amplifiers, but can also be used in low power, automotive applications. This device is also available in a surface mount package.

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