SSM6K361NU,LF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 100µA
Package / Case:	6-WDFN Exposed Pad
Supplier Device Package:	6-UDFNB (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	150°C
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	430pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	3.2nC @ 4.5V
Series:	U-MOSVIII-H
Rds On (Max) @ Id, Vgs:	69 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.5A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<!-- This article is about the SSM6K361NU LF Application Field and Working Principle. It has been categorized as Transistors - FETs, MOSFETs - Single.--><p>The SSM6K361NU is a low frequency linear field-effect transistor (FET) specifically designed for operation in switching power dissipation applications. The device has a high current capacity of 600mA and can be used in a variety of applications such as audio, audio visual, and high-speed data transfer.</p><p>The SSM6K361NU is an N-channel FET that is enhanced for low-noise performance. The device features a low resistance gate-drain path which allows for high-speed switching. The device also features an on-state resistance of just 0.08 ohms, ensuring low power dissipation for switching power applications. The device also incorporates a low input voltage level, making it suitable for operation in low voltage applications. The device features a maximum supply voltage of 30V, and a maximum operating temperature of 175°C.</p><p>The SSM6K361NU is an N-channel FET that is designed to provide high-speed switching combined with low noise and low power dissipation. The device has a construction in which the gate is isolated from the drain. This is achieved using a dual gate-to-drain (G-D) structure. The device operates at frequencies of up to 10MHz and is available in low and high frequency versions.</p><p>The SSM6K361NU is a step recovery FET where the device will rapidly switch from a low to a high drain-to-source voltage at the application of a positive gate voltage. The device is also capable of rapid switching of a positive to a negative drain-to-source voltage when a negative gate voltage is applied. This allows the device to be used in switching applications that require both high-speed and low power dissipation.</p><p>The SSM6K361NU has a variety of applications, including audio, audio-visual, high-speed data transfer, and switching power dissipation applications. The device can also be used in low voltage applications such as low noise audio amplifiers and power supplies.</p><p>In conclusion, the SSM6K361NU is a low frequency linear FET designed for operation in switching power dissipation applications. The device has a high current capacity of 600mA, a low resistance gate-drain path, and a low input voltage level. The device is also capable of rapid switching from a low to a high drain-to-source voltage when a positive gate voltage is applied, and can be used in a variety of audio, audio-visual, and high-speed data transfer applications.</p>

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