SSM6K361NU,LF Discrete Semiconductor Products |
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Allicdata Part #: | SSM6K361NULFTR-ND |
Manufacturer Part#: |
SSM6K361NU,LF |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 100V 3.5A 6-UDFNB |
More Detail: | N-Channel 100V 3.5A (Ta) 2.5W (Ta) Surface Mount 6... |
DataSheet: | SSM6K361NU,LF Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.10893 |
Specifications
Series: | U-MOSVIII-H |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 69 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-UDFNB (2x2) |
Package / Case: | 6-WDFN Exposed Pad |
Description
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<!-- This article is about the SSM6K361NU LF Application Field and Working Principle. It has been categorized as Transistors - FETs, MOSFETs - Single.--><p>The SSM6K361NU is a low frequency linear field-effect transistor (FET) specifically designed for operation in switching power dissipation applications. The device has a high current capacity of 600mA and can be used in a variety of applications such as audio, audio visual, and high-speed data transfer.</p><p>The SSM6K361NU is an N-channel FET that is enhanced for low-noise performance. The device features a low resistance gate-drain path which allows for high-speed switching. The device also features an on-state resistance of just 0.08 ohms, ensuring low power dissipation for switching power applications. The device also incorporates a low input voltage level, making it suitable for operation in low voltage applications. The device features a maximum supply voltage of 30V, and a maximum operating temperature of 175°C.</p><p>The SSM6K361NU is an N-channel FET that is designed to provide high-speed switching combined with low noise and low power dissipation. The device has a construction in which the gate is isolated from the drain. This is achieved using a dual gate-to-drain (G-D) structure. The device operates at frequencies of up to 10MHz and is available in low and high frequency versions.</p><p>The SSM6K361NU is a step recovery FET where the device will rapidly switch from a low to a high drain-to-source voltage at the application of a positive gate voltage. The device is also capable of rapid switching of a positive to a negative drain-to-source voltage when a negative gate voltage is applied. This allows the device to be used in switching applications that require both high-speed and low power dissipation.</p><p>The SSM6K361NU has a variety of applications, including audio, audio-visual, high-speed data transfer, and switching power dissipation applications. The device can also be used in low voltage applications such as low noise audio amplifiers and power supplies.</p><p>In conclusion, the SSM6K361NU is a low frequency linear FET designed for operation in switching power dissipation applications. The device has a high current capacity of 600mA, a low resistance gate-drain path, and a low input voltage level. The device is also capable of rapid switching from a low to a high drain-to-source voltage when a positive gate voltage is applied, and can be used in a variety of audio, audio-visual, and high-speed data transfer applications.</p>The specific data is subject to PDF, and the above content is for reference
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