SSM6J50TU,LF Allicdata Electronics
Allicdata Part #:

SSM6J50TULFTR-ND

Manufacturer Part#:

SSM6J50TU,LF

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F UF6 S-MOS (LF) TRANSIST
More Detail: P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount U...
DataSheet: SSM6J50TU,LF datasheetSSM6J50TU,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07651
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6
Mounting Type: Surface Mount
Operating Temperature: 150°C
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Vgs (Max): ±10V
Series: U-MOSIV
Rds On (Max) @ Id, Vgs: 64 mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM6J50TU,LF is a single high voltage N-channel MOSFET designed to operate in high voltage and high current application requirements. The SSM6J50TU,LF offers extended drain-source voltage, maximum operating temperature range, and ultra-low on-resistance, making it ideal for many types of high voltage applications.

The SSM6J50TU,LF belongs to the family of Advanced Power MOSFETs, which are designed to provide superior performance in small design size and in various applications. The use of advanced technology and superior device parameters enables superior performance as compared to traditional power MOSFETs.

The SSM6J50TU,LF’s general application field includes load switch, DC/DC converter, and power supply. It is specifically designed for automotive applications, such as air conditioning and audio equipment, lighting and powertrain, but can also be used in industrial equipment, power electronics, and other demanding applications. Additionally, the SSM6J50TU,LF can be used for high efficiency and highly reliable switching application requirement.

The SSM6J50TU,LF features a dielectric strength of greater than 150V and a low on-resistance of 75 mΩ @ 10 V. It has a maximum continuous drain current of 8 A at 25°C and a maximum peak drain current of 16 A at 25°C. The SSM6J50TU,LF also has a low gate threshold voltage of 2V and an extended drain-source voltage of up to 150V.

The working principle of the SSM6J50TU,LF is based on the physics of MOSFETs. It consists of a P-type gate material that is separated from a N-type source and drain electrodes by a thin dielectric. When a voltage is applied to the gate of the MOSFET, it causes depletion of the source and drain junction, forming an electric field that allows or blocks the conducting channel between the source and the drain. The SSM6J50TU, LF has a high voltage and can support up to 150V, allowing it to handle higher power requirements. The SSM6J50TU, LF also has an ultra-low on-resistance of 75 mΩ @ 10 V allowing for higher current handling to replace bulky low resistance power devices. Since the conducting channel is completely disconnected from the gate, the SSM6J50TU,LF can be used for higher switching frequency applications.

In conclusion, the SSM6J50TU,LF is a high voltage and high current single N-Channel MOSFET designed for automotive, industrial, and other demanding applications. The SSM6J50TU,LF has extended drain-source voltage, high dielectric strength, ultra-low on-resistance, and fast switching rate, making it ideal for a wide range of high voltage and high current applications. By using advanced technology and superior device parameters, the SSM6J50TU,LF offers superior performance compared to conventional power MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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