STW15N95K5 Allicdata Electronics
Allicdata Part #:

497-14291-5-ND

Manufacturer Part#:

STW15N95K5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 950V 12A TO247
More Detail: N-Channel 950V 12A (Tc) 170W (Tc) Through Hole TO-...
DataSheet: STW15N95K5 datasheetSTW15N95K5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 950V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW15N95K5 is a general-purpose Field-Effect Transistor (FET) with a very thin oxide layer between source and drain channels. It belongs to the family of Metal-Oxide Semiconductor FETs (MOSFETs), which are widely used in integrated circuits and are the fundamental building blocks of modern electronics. The STW15N95K5 is a single-FET device, meaning it consists of a single channel connected between a source and a drain terminal. In addition, the STW15N95K5 also has a gate terminal, which allows a voltage to be applied to control the current flow between source and drain.

To understand the STW15N95K5’s application field and working principle, we must first look at the structure of the transistor. The STW15N95K5 is an N-channel device, which means that its drain and source terminals are both composed of N-type semiconductor material, such as silicon or indium arsenide. The FET’s body, or substrate, is covered with a very thin layer of insulating material, usually silicon dioxide or silicon nitride. This thin insulating layer is referred to as the ‘Oxide Layer’, which is key to the device’s working principle.

Applying a voltage to the gate terminal causes electrons to be pulled through the thin oxide layer and into the channel, resulting in a current flow between source and drain. This is known as the depletion mode of operation, and is the basis of the most commonly used FET device, the NMOSFET (N-Channel Metal Oxide Semiconductor Field Effect Transistor). In the depletion mode, all that is needed to control the current flow between source and drain is a voltage level at the gate terminal. For the STW15N95K5, the gate voltage must be within the operating range of -4.5V to -10V for proper operation. Thus, by applying a certain gate voltage, the STW15N95K5 can be used as an electronic switch, able to turn on or off with a minimum voltage level.

One of the main applications of the STW15N95K5 is signal conditioning in medium power electronic systems such as computer processors, LED lighting, electric motors, and control circuits and other applications where digital signals are used. By connecting positive and negative voltage levels to the gate terminal and adjusting the gate voltage, it can be used to amplify or attenuate a given signal, and is thus very useful for signal conditioning. The device is also useful for power conversion, as it can be used to convert AC power to DC power, or vice versa. Additionally, the high switching speed of the STW15N95K5 makes it a good choice for pulse‑width‑modulation circuits, where the voltage levels need to be changed quickly and accurately.

Overall, the STW15N95K5 is a versatile general- purpose FET that can be used in a variety of applications, ranging from signal conditioning to power conversion. The device can be used as either a switch or an amplifier, and its high switching speed makes it an ideal choice for pulse-width modulation applications. By understanding the structure and working principle of the STW15N95K5, engineers can easily incorporate this single FET into their electronic designs in order to achieve a desired result.

The specific data is subject to PDF, and the above content is for reference

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