
Allicdata Part #: | 497-10973-5-ND |
Manufacturer Part#: |
STW16N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 12A TO-247 |
More Detail: | N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 279 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW16N65M5 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are devices used in many areas of electronics, providing rapid and efficient switching, amplification and noise reduction. Specifically, the STW16N65M5 is an N-Channel Enhancement Mode MOSFET, meaning it is an N Channel device and it does not require a DC voltage for operation. This makes it a popular choice for low voltage and high power applications.
The main application field of an STW16N65M5 is high power switching and such, such as in motor drivers, DC-DC convertors, stepper motor drivers and AC-DC power supplies. When used, it can provide relatively precise on/off control because of its low gate charge. The device also offers low input capacitance, low gate resistance and low output capacitance which makes it suitable for applications that require quick and efficient switching capabilities. Such applications may include battery management systems and other power electronics-related applications.
To understand the working principle of the STW16N65M5, we need to look at the device itself. The device includes three terminals: source, gate and drain. The source is where the main current flows and is connected to the negative voltage terminal. The drain is where the output current flows and is connected to the positive voltage terminal. The gate is the controlling terminal which is connected to the positive voltage terminal. This allows the gate to control the current flow from the source to the drain.
When the gate is provided with a positive voltage, a depletion layer is created which restricts current flow from the source to the drain. Thus, the gate can be used to switch the current flow on and off. When the gate is activated, the depletion layer dissipates and current can flow freely from the source to the drain. This makes the device useful for low voltage switching applications.
As the gate voltage is limited, the current flowing through the device must also be limited. This is why the device typically has an “RDSon” (resistance-drain-source-on) value as well. The RDSon value is the resistance of the device when it is powered on and is an important parameter to consider when choosing an STW16N65M5.
In addition, the STW16N65M5 has a low Vds (drain-source voltage drop) rating which means that the device does not significantly drop the voltage of the circuit. This makes it a good choice for applications that require efficient power management. Additionally, the device also has a fast switching speed which makes it ideal for many high-powered and high-speed applications.
Overall, the STW16N65M5 is an excellent choice for low voltage and high power applications. Its low gate charge, low input capacitance, low gate resistance, low output capacitance and fast switching speed make it well-suited for applications requiring fast and efficient power management. As such, the device is commonly used in motor drivers, DC-DC convertors, stepper motor drivers, AC-DC power supplies and battery management systems.
The specific data is subject to PDF, and the above content is for reference
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