STW13NM50N Allicdata Electronics
Allicdata Part #:

497-7617-5-ND

Manufacturer Part#:

STW13NM50N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 12A TO-247
More Detail: N-Channel 500V 12A (Tc) 100W (Tc) Through Hole TO-...
DataSheet: STW13NM50N datasheetSTW13NM50N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STW13NM50N is a N-channel MOSFET, or metal-oxide-semiconductor field-effect transistor, that is a type of transistor used for amplifying or switching electronic signals. This particular transistor has a maximum drain current of 13amps, a 4.5V gate threshold voltage, 1.7V drain source breakdown voltage, and a maximum drain source voltage of 500V. It also features a low gate charge and has a fast switching speed. This makes the STW13NM50N an excellent choice for a variety of applications.

Applications

The STW13NM50N can be used in a variety of applications, such as load switching, motor control, and high-frequency switching. The MOSFET is also suitable for high-current applications and can be used as a voltage switching device in a variety of circuits. For example, it can be used in a circuit to control the voltage of a DC motor or as a switch in a switching power supply. It can also be used as a driver in an amplifier or as a level shifter in a high-speed digital logic circuit. Additionally, the STW13NM50N can be used as a switch in power electronics applications, such as in motor controllers and inverters.

Working Principle

The STW13NM50N is a N-channel MOSFET, which means the current is conducted through an insulated gate, providing an efficient way to switch on and off the current. It works according to the principle that when a voltage is applied to the gate, it modifies the distribution of free electrons in the MOSFET structure, and affects the transistor’s behavior. This is known as the “doping” effect and it allows the current to start flowing from the drain to the source. The voltage applied to the gate will determine the magnitude of the current, which means that the magnitude of the current is proportional to the voltage applied to the gate. This is known as the “field-effect” and is used to control currents in electronic circuits.

Conclusion

The STW13NM50N is a powerful, versatile N-channel MOSFET that can be used in a variety of applications such as switching, motor control, and high-frequency switching. It is a great choice for those looking for a reliable, efficient way to control and switch currents. The STW13NM50N operates on the field-effect principle, which allows it to have a wide range of applications, including power electronics, amplifiers, and level shifters. Its drain current of 13amps, gate threshold voltage of 4.5V, and its maximum drain-source voltage of 500V are just a few of the features that make this transistor an excellent choice.

The specific data is subject to PDF, and the above content is for reference

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