
Allicdata Part #: | 497-7617-5-ND |
Manufacturer Part#: |
STW13NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 12A TO-247 |
More Detail: | N-Channel 500V 12A (Tc) 100W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 320 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW13NM50N is a N-channel MOSFET, or metal-oxide-semiconductor field-effect transistor, that is a type of transistor used for amplifying or switching electronic signals. This particular transistor has a maximum drain current of 13amps, a 4.5V gate threshold voltage, 1.7V drain source breakdown voltage, and a maximum drain source voltage of 500V. It also features a low gate charge and has a fast switching speed. This makes the STW13NM50N an excellent choice for a variety of applications.
Applications
The STW13NM50N can be used in a variety of applications, such as load switching, motor control, and high-frequency switching. The MOSFET is also suitable for high-current applications and can be used as a voltage switching device in a variety of circuits. For example, it can be used in a circuit to control the voltage of a DC motor or as a switch in a switching power supply. It can also be used as a driver in an amplifier or as a level shifter in a high-speed digital logic circuit. Additionally, the STW13NM50N can be used as a switch in power electronics applications, such as in motor controllers and inverters.
Working Principle
The STW13NM50N is a N-channel MOSFET, which means the current is conducted through an insulated gate, providing an efficient way to switch on and off the current. It works according to the principle that when a voltage is applied to the gate, it modifies the distribution of free electrons in the MOSFET structure, and affects the transistor’s behavior. This is known as the “doping” effect and it allows the current to start flowing from the drain to the source. The voltage applied to the gate will determine the magnitude of the current, which means that the magnitude of the current is proportional to the voltage applied to the gate. This is known as the “field-effect” and is used to control currents in electronic circuits.
Conclusion
The STW13NM50N is a powerful, versatile N-channel MOSFET that can be used in a variety of applications such as switching, motor control, and high-frequency switching. It is a great choice for those looking for a reliable, efficient way to control and switch currents. The STW13NM50N operates on the field-effect principle, which allows it to have a wide range of applications, including power electronics, amplifiers, and level shifters. Its drain current of 13amps, gate threshold voltage of 4.5V, and its maximum drain-source voltage of 500V are just a few of the features that make this transistor an excellent choice.
The specific data is subject to PDF, and the above content is for reference
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