STW11NK90Z Allicdata Electronics
Allicdata Part #:

497-6198-5-ND

Manufacturer Part#:

STW11NK90Z

Price: $ 4.42
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 900V 9.2A TO-247
More Detail: N-Channel 900V 9.2A (Tc) 200W (Tc) Through Hole TO...
DataSheet: STW11NK90Z datasheetSTW11NK90Z Datasheet/PDF
Quantity: 454
1 +: $ 4.41630
10 +: $ 4.28381
100 +: $ 4.19549
1000 +: $ 4.10716
10000 +: $ 3.97467
Stock 454Can Ship Immediately
$ 4.42
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 980 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Among the wide variety of transistors used in industrial devices and electronics, Field Effect Transistors (FETs) are one of the most commonly used. Generally, FETs are used to amplify or switch electrical signals and current. The STW11NK90Z is one type of FET, specifically classified as a single MOSFET.

The “MOS” in MOSFET stands for Metal-Oxide-Semiconductor, which is a feature of MOSFET construction that makes them more efficient than other types of FET transistors. Single MOSFET transistors are further defined by having a single gate for controlling the flow of electrons from the drain to the source. These single MOSFETs are primarily used in power electronics because they can operate at high voltages and be combined into circuits to control the flow of power.

The STW11NK90Z is a single MOSFET transistor specifically designed to handle large wattage power requirements that require high efficiency. This FET is rated to have a drain voltage of 900 volts and a maximum drain source voltage of 500 volts. It can also handle a power drain of up to 60 watts and its maximum gate-source voltage is rated for +/-20 volts. These characteristics make the STW11NK90Z ideal for use in power steering, motor control, and other applications that require high voltage and wattage.

The STW11NK90Z also has a low on-resistance of 0.3 ohms and a low gate charge of 6.8 nanocoulombs making it ideal for minimizing power losses and achieving higher efficiencies. In addition, the device features a low input capacitance which is necessary when designing high-speed switching applications. Finally, its low thermal resistance of 1.2°C/W makes the STW11NK90Z ideal for use in applications that require the device to withstand high temperature operation.

The STW11NK90Z works by controlling the electrical signal or current flow between the source and drain. When a positive voltage is applied to the gate terminal, it creates an electric field that attracts electrons from the drain to channel them to the source. This creates a channel between the drain and the source, allowing electrical current to flow between the two points. Conversely, when a negative voltage is applied to the gate terminal, it creates an electrical field that repels electrons from the source and prevents current from flowing through the channel between the drain and the source.

In summary, the STW11NK90Z is a single MOSFET transistor, designed to handle large wattage power requirements with high efficiency and low power losses. It has a max drain voltage of 900 volts, a maximum drain source voltage of 500 volts, and can handle a power drain up to 60 watts. Its low on-resistance of 0.3 ohms and its low input capacitance make it ideal for high-speed switching applications, while its low thermal resistance ensures it can withstand high temperature operation. In operation, the STW11NK90Z can control the electrical signal or current flow between two points, either by creating a channel allowing current to flow or by blocking current by repelling electrons.

The specific data is subject to PDF, and the above content is for reference

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