
Allicdata Part #: | 497-3258-5-ND |
Manufacturer Part#: |
STW14NK50Z |
Price: | $ 2.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 14A TO-247 |
More Detail: | N-Channel 500V 14A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 538 |
1 +: | $ 2.97000 |
10 +: | $ 2.88090 |
100 +: | $ 2.82150 |
1000 +: | $ 2.76210 |
10000 +: | $ 2.67300 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW14NK50Z is a state-of-the-art power MOSFET technology that provides efficient performance and maximum power delivery in applications ranging from high-current, high-voltage, and high-frequency applications. This device utilizes a novel, highly innovative smart Gate driver technology to eliminate the need for a separate gate driver, offering an improved power stage design with unparalleled performance, size and weight savings.
The STW14NK50Z is a N-channel, logic-level, MOSFET available in a TO-220 package and on a 3.2mm by 3.2mm MOSFET module. It is designed to handle over 10A-rms continuous and high-switching power stages with 400V ratings. The device features an advanced gate driver and low gate-source capacitance, making it suitable for high-performance and high-frequency power stages with low power dissipation.
The STW14NK50Z is a high-performance, high-efficiency power MOSFET which combines a logic level gate drive with a high-speed switching operation. It utilizes a unique gate driver that eliminates the need for a separate driver IC, enabling a more efficient power stage design. This device is able to operate with a wide range of gate voltages and gate capacitances. The STW14NK50Z also features an improved gate turn-on and gate turn-off response for faster switching performance.
The STW14NK50Z’s gate driver circuit provides a fast, powerful gate drive with minimal gate charge and commutation times. This ensures low conduction losses and high turn-on/turn-off times, allowing the device to support higher frequency operation. Its efficient performance also helps reduce total power consumption and keeps power losses to a minimum.
The STW14NK50Z provides better performance even at higher voltages with improved reverse conduction blocking capability. It has reliable ESD performance due to its rugged construction and its low package inductance. It is also designed to be insensitive to temperature cycling, allowing for greater long-term reliability. Additionally, the device provides very low gate-source capacitance for improved power transfer.
The STW14NK50Z is an industry-leading power MOSFET which provides high efficiency, reliable performance, and a compact package size. It combines a powerful gate driver and high speed switching to provide an improved power stage design with unparalleled performance and power delivery. It is suitable for use in applications ranging from high current, high voltage, and high frequency power stages.
The specific data is subject to PDF, and the above content is for reference
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