STW20NK70Z Allicdata Electronics
Allicdata Part #:

497-3559-5-ND

Manufacturer Part#:

STW20NK70Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 700V 20A TO-247
More Detail: N-Channel 700V 20A (Tc) 350W (Tc) Through Hole TO-...
DataSheet: STW20NK70Z datasheetSTW20NK70Z Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 285 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 700V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STW20NK70Z is a type of semiconductor power device, more specifically, a field-effect transistor (FET). FETs are used in a wide array of applications, such as in radio frequency (RF) amplifiers and in digital logic circuits. The STW20NK70Z is a particular type of FET known as a metal-oxide semiconductor FET (MOSFET), with STW in the product name signifying the MOSFET type. A MOSFET is a unipolar transistor, meaning that it requires one type of charge carrier (either electrons or holes) for its operation. The STW20NK70Z is a single MOSFET, meaning that it has just one drain-source path.

The STW20NK70Z is used as a switch due to its ability to handle large currents and voltages while switching at a high frequency. Since its design eliminates the need for an additional biasing circuit, the STW20NK70Z is often used in systems that require minimal or no external circuit setup. It is also very efficient in its use of power, making it a popular choice for low-power applications. Additionally, the device has a very low on-resistance, meaning it can switch quickly and with minimal power loss.

The STW20NK70Z has a maximum power dissipation of 33 watts and an on-resistance of 1.3 ohms. It can handle peak currents up to 4.5 amps, with a maximum voltage rating of 400 volts. Its gate threshold voltage is 3 volts, meaning that switching the transistor on requires at least 3 volts of gate bias. The drain source resistance (the resistance between the drain and source terminals when the gate voltage is applied and the device is operating normally) is also very low, at only 0.42 ohms.

The working principle of the STW20NK70Z is based on modulating the gate current to control the source-drain current. In this device, the gate-source voltage (Vgs) and drain-source voltage (Vds) is the main factors that affect the amount of channel current. When applying a Vgs of greater than 3 volts, the drain-source resistance is very low, allowing a large current flow. When the Vgs is reduced and reaches below 3 volts, the drain-source resistance increases significantly, preventing current flow through the device.

The STW20NK70Z can be used in a wide variety of applications, such as in switching power supplies, high-speed inverter circuits, and motor drives. It is often used as a load switch in motor controllers, since the low on-resistance allows for quick switching and fast response time. Additionally, it can be used in other circuits requiring fast switching of high-voltage, high-current loads. The STW20NK70Z is also ideal for audio applications, where its low on-resistance allows for minimal signal distortion.

In conclusion, the STW20NK70Z is a popular FET due to its high current- and voltage-handling capability combined with a low on-resistance. It is used in many applications, such as in motor controllers, switching power supplies, and audio amplifiers. The STW20NK70Z works by modulating the gate current to regulate the source-drain current, and its operation is triggered by applying an appropriate gate voltage. The device is also very efficient, making it a great choice for low-power applications.

The specific data is subject to PDF, and the above content is for reference

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