STW21N150K5

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The STW21N150K5 is a type of power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed and developed by STMicroelectronics. It is a type of insulated gate field effect transistor (IGFET) designed specifically for the automotive market. The STW21N150K5 has an avalanche breakdown voltage of ±17 V, a drain-source on-resistance (RDS(ON)) of 11.600 ohms and a gate-source capacitance (CISS) of 5 pF. The maximum drain-source voltage, VDSS is 150 V. The on-state drain current, maximum drain current, ID, is about 12.2 A for the STW21N150K5.

The STW21N150K5 is an ideal choice for various automotive applications, such as battery management systems, car supply power supplies, motor control, and automotive lighting systems. It is well suited for use in high-power applications such as DC-DC converters and power factor correction circuits. In addition, the STW21N150K5 is also suitable for applications where low EMI/RFI noise levels and low power consumption are desired.

The working principle of the STW21N150K5 power MOSFET is based on its insulated gate structure. This type of device allows the voltage applied to the gate to be controlled without any current flow. When a positive voltage is applied to the gate, it attracts electrons away from the drain-source channel and decreases the current flowing through the device. When a negative voltage is applied to the gate, it attracts electrons towards the drain-source channel, increasing the current flowing through the device.

The STW21N150K5 power MOSFET also incorporates a unique overvoltage protection feature. This feature prevents the device from being damaged when it is exposed to voltages above the specified maximum drain-source voltage. It also limits the voltage seen by the drain to the maximum specified value when a short circuit is present.

In summary, the STW21N150K5 power MOSFET is an ideal choice for a variety of automotive applications, offering a low on-resistance, good avalanche breakdown voltage and high drain current capacity. It also features a unique overvoltage protection feature, designed to protect the device from overvoltage and short-circuit conditions. This makes it an excellent choice for automotive applications where low EMI/RFI noise levels and low power consumption are required.

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