STW23NM60N Allicdata Electronics
Allicdata Part #:

497-7621-5-ND

Manufacturer Part#:

STW23NM60N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 19A TO-247
More Detail: N-Channel 600V 19A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: STW23NM60N datasheetSTW23NM60N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STW23NM60N is a type of insulated gate FETs, known as a metal oxide semiconductor Field Effect Transistor (MOSFET). MOSFETs are used in different types of electronic devices and circuits, and are typically the most common metal oxide semiconductor component used in the construction of transistors. The STW23NM60N is a simple yet powerful MOSFET component and is typically used in voltage regulator circuits, power switches, and other such applications that require a precise voltage level or current flow.

The STW23NM60N is typically used in medium to high power applications that require moderate to high current strength, such as adjustable voltage regulators, switch mode power supplies, motor controllers, and similar types of applications. This component is capable of operating at a voltage range of up to 800V, making it a suitable component for applications that need to switch large currents, or where precise control of voltage is required.

The STW23NM60N is a three-terminal component and consists of a source, drain, and gate terminal. It operates as a voltage-controlled device, where the gate voltage will control the source-drain current. This component can be used as an N-type or P-type, and for a wide range of applications.

The STW23NM60N is a dual N-type MOSFET and can be used either as an N-type or P- as it has two N-type gates. This component can be used to control the current, power, and voltage in electronic control circuits. It is also commonly used in motor control, switching voltage, and current sense devices.

When using the STW23NM60N, the gate source voltage needs to be set higher than the source-drain voltage. When this voltage is applied to the gate, the source-drain current will be controlled. This allows precise control of the voltage and current levels, making it a suitable component for power switching and motor control applications.

The STW23NM60N has a wide variety of applications in different fields. It is commonly used in switching power supplies, DC-DC converters, instrumentation, solar panel inverters, servo motor control, medical imaging, and the like. In all of these applications, the component is used to precisely control the current, power and voltage levels of the electrical signal, ensuring efficiency and accuracy.

In conclusion, the STW23NM60N is a simple yet powerful MOSFET component that is suitable for many different applications, such as adjustable voltage regulators, switch mode power supplies, motor controllers, and more. It is a three-terminal component that operates as a voltage-controlled device, and the gate source voltage must be set higher than the source-drain voltage to control the source-drain current. The STW23NM60N is a versatile component that is commonly used in many different industrial applications, and it has a wide range of applications in different fields, such as in switching power supplies, DC-DC converters, instrumentation, solar panel inverters, servo motor control, medical imaging, and more.

The specific data is subject to PDF, and the above content is for reference

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