Allicdata Part #: | 497-14582-5-ND |
Manufacturer Part#: |
STW24N60DM2 |
Price: | $ 4.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 18A TO-247 |
More Detail: | N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | STW24N60DM2 Datasheet/PDF |
Quantity: | 131 |
1 +: | $ 3.75480 |
30 +: | $ 3.01581 |
120 +: | $ 2.74770 |
510 +: | $ 2.22494 |
1020 +: | $ 1.87645 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1055pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | FDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STW24N60DM2 is a high voltage power switch module which is very commonly used in a wide range of devices. It is a type of field-effect transistor (FET), and so it is usually used in applications where a small signal needs to control a large amount of current. The FET is an insulated-gate type FET which is a type of semiconductor device with two terminals, the source and the drain, and these are connected to the gate of the FET.
The main function of the STW24N60DM2 is to act as a high voltage power switch. It is usually used in power switching applications as it has a very high switching speed and its gate voltage is adjustable which allows the current to be regulated. It also has low power loss characteristics which makes it ideal for power management applications.
The STW24N60DM2 has a number of applications depending on the current rating and voltage rating of the device. It can be used for power conversion applications such as DC/DC converters, high power inverters and power factor correction systems. It can also be used in industrial automation, motor control and power distribution systems.
The working principle of STW24N60DM2 is based on a field-effect transistor which uses a voltage applied across its gates to control the flow of current between its source and drain terminals. When a voltage is applied to the gate, it creates an electric field which is then used to control the flow of current. It can be used to switch on or off a high current at a low voltage, making it ideal for power management applications.
The device is also capable of working in a number of modes, such as linear mode, which is used for efficient power conversion applications and switch mode which is used for high speed switching applications. In linear mode, the device acts as a voltage regulator and in switch mode, the device acts as a switch.
The STW24N60DM2 has also a number of advantages such as its low input capacitance, its high switching speed, its low on-state resistance and its low total gate charge which makes it very efficient. It also has high reverse transfer capability which makes it ideal for load sharing applications. In addition, its on-state voltage drop is low which makes it very suitable for high power applications.
In summary, the STW24N60DM2 is a high voltage power switch module which is commonly used in a wide variety of devices and applications. It is an insulated-gate type Field-effect transistor which uses a voltage applied across its gates to control the flow of current between its source and drain terminals. It can be used in linear and switch mode, and has a number of advantages, including its low input capacitance, high switching speeds, low on-state resistance and total gate charge, and its high reverse transfer capability.
The specific data is subject to PDF, and the above content is for reference
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