STW28N60M2 Allicdata Electronics
Allicdata Part #:

497-14292-5-ND

Manufacturer Part#:

STW28N60M2

Price: $ 3.91
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 24A TO-247
More Detail: N-Channel 600V 24A (Tc) 170W (Tc) Through Hole TO-...
DataSheet: STW28N60M2 datasheetSTW28N60M2 Datasheet/PDF
Quantity: 1
1 +: $ 3.91000
10 +: $ 3.79270
100 +: $ 3.71450
1000 +: $ 3.63630
10000 +: $ 3.51900
Stock 1Can Ship Immediately
$ 3.91
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW28N60M2 is a sensor-gate controlled MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in motor control, switching and telecommunication applications. It is a single N-channel device specifically designed for high frequency switching and low-loss power control.

Application Field

The STW28N60M2 offers a wide range of applications such as in brushless DC motors, HVAC systems, home and office automation, industrial applications, power switches and inverters. This device is widely used in all kinds of electronic equipment including medical devices, automobile parts, and appliances.

Working Principle

The device is based on the metal-oxide semiconductor principle, wherein electrons are induced onto a semiconductor material, opening and closing the gate of the transistor. An electric field is created by the gate, which affects the P-type (positive type) and N-type (negative type) layers of the semiconductor material, allowing current to pass through the device. As with all MOSFETs, the STW28N60M2 requires a voltage signal to the gate in order to activate the transistor, however, the signal strength can be reduced to a few tens of mV. this makes the device ideal for low-power, high-speed switching purposes.

The gate capacitance for STW28N60M2 is low compared to other types of MOSFET devices, which allows for faster switching and signal transmission. The device has a high input impedance, which further helps reduce signal distortion or load on the control circuit. It also features an Avalanche Ruggedness rating which makes it suitable for use in high-voltage applications.

The STW28N60M2 has low thermal resistance, high frequency performance and low leakage current, which makes it suitable for a wide range of switching applications. The device can be used to control current flow in both directions, as well as in varied applications such as boost converters, buck converters and resonant converters. In addition, it is suitable for use in both linear and switching applications.

Overall, the STW28N60M2 is a reliable MOSFET device that can be used in a wide range of applications. It offers excellent switching speeds and low thermal resistance, as well as low gate capacitance, high input impedance, and an avalanche ruggedness rating. These features make the STW28N60M2 suitable for a variety of low-power, high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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