STW20NM60

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW20NM60 is a powerful and reliable N-channel Power MOSFET which is specifically designed for intelligent power switching operations. It utilizes advanced high voltage trench technology, allowing it to operate in low voltage applications with the extra encapsultanet protection increasing its usability in high frequency switching operations. Utilizing a very low gate charge technology, it is more effective than traditional technologies and its fast switching time also makes it ideal for high frequency switching operations.

The STW20NM60 is designed to handle up to 600V of operation, making it suitable for high power applications such as motor controls, UPS systems, voltage regulators, dc-dc converters and various industrial automation systems. With its high efficiency and ultra-low on-resistance, it also makes an excellent choice for battery operated devices, lighting systems and portable electronics. Its low gate charge technology allows for higher power efficiency and therefore, lower running costs for users.

The STW20NM60 features a 30V gate-to-source rating and a maximum drain current Id of 95Amps. Its breakdown voltage Vds is rated at 600V. Its maximum continuous drain source voltage is Vdds(max). Its maximum drain source-on resistance RDS(on) is 6 mOhms at a 4.5V gate threshold. This device also features an ultra-low gate charge technology with an operating frequency of 300kHz.

The working principle of the STW20NM60 is based on the enhancement type metal oxide semiconductor field effect transistor (MOSFET). Since this device utilizes a metal oxide gate, it can easily be used to regulate current. It consists of two electrodes, the drain and the source, and the gate in between. The gate electrode is made up of a semiconductor material, with a small amount of metal oxide in between. When the voltage is applied to the gate, it increases the electrostatic field in the region between the gate and the semiconductor material. This increases the conductivity and thus allows more current to flow through the transistor.

The STW20NM60 is a very versatile device which can be used in a wide range of applications. It is a perfect choice for high power switching and controlling applications such as motor controls, UPS systems, voltage regulators, dc-dc converters and various industrial automation systems. It can also be used in a variety of battery operated devices, lighting systems and portable electronics due to its high efficiency and ultra-low on-resistance features. This device provides an excellent performance and is reliable in many different environments and applications.

The specific data is subject to PDF, and the above content is for reference