STW26NM50

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	313W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3000pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	106nC @ 10V
Series:	MDmesh™
Rds On (Max) @ Id, Vgs:	120 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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The STW26NM50 is a N-channel power MOSFET , which is a type of transistor. It is built on a state-of-the-art high voltage MOSFET process and is designed for applications such as a broad range of switch mode power supplies, PFC converters, motor drives, and other power electronic applications.The STW26NM50 is designed for high frequency switching performance and low conduction losses, with low on-resistance, high-frequency figure of merit, and fast switching times. This makes it ideal for a variety of different applications that require these features.The STW26NM50 is a relatively small device measuring 4.9x3mm and drawing only 10uA of static power. This allows it to be used in more space constrained applications such as hand held devices and automotive electronics. Additionally, the device has an operating temperature range of -55°C to 150°C, meaning it is suitable for very wide range of temperatures and environments.The STW26NM50 has a maximum drain current rating of 16A, a maximum drain-source breakdown voltage rating of 600V, a maximum gate charge of 24nC, and a maximum switching speed of 20ns. This allows for fast response in order to switch power at high rates. The maximum drain-source on resistance (RDS(ON)) of the device is about 55mΩ at 10V, meaning that the device can dissipate maximum power with minimum conduction losses. The STW26NM50 is a N-channel power MOSFET, meaning that it allows for the transfer of electric current from the source to the drain by simply applying a positive voltage on the gate. This is also known as enhancement mode FETs, because they require external energy in the form of voltage to be added in order to make them conduct. This enables them to be used in a variety of different switching applications.The STW26NM50 is designed for high-frequency switchmode power supplies, PFC converters, motor drives and other power electronic applications. It is designed for fast switching with low conduction losses, making it an ideal choice for applications which require these features. Additionally, its small size allows for it to be used in space constrained applications such as hand held devices and automotive electronics, while its wide temperature range makes it suitable for a wide range of applications and environments.In conclusion, the STW26NM50 is a N-channel power MOSFET which is designed for a variety of different high-frequency switchmode power supply, PFC converter, motor drive and other power electronic applications. It features low on-resistance, high-frequency figure of merit, fast switching times, and a temperature range that is suitable for a wide range of applications and environments. This makes it an ideal choice for applications where low conduction losses, fast switching speeds and space efficiency are key requirements.

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