STW28NM50N

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The STW28NM50N is a N-channel HEXFET power MOSFET with a low RDS(on) at 4.5 V. It is designed to offer excellent performance in a variety of applications. This device is ideal for use in applications such as DC/DC converters, servers, and general purpose power switching.

STW28NM50N Application Field

The STW28NM50N is an N-channel MOSFET suitable for a wide range of applications. It is a versatile device that can be used for power switching in DC/DC converters, server applications, and general purpose switching circuits. Additionally, the STW28NM50N can be used in motor drives, as well as switching applications where a low on-resistance, high breakdown voltage and fast switching times are important.

STW28NM50N Working Principle

The STW28NM50N is an N-channel MOSFET with a low RDS(on) at 4.5 V. It is based on a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) design. The device combines the features of a low-voltage, high-current enhancement MOSFET with the simplicity of a silicon-controlled rectifier (SCR) to provide a versatile and powerful solution for a variety of applications. The STW28NM50N functions as a voltage-controlled switch, allowing current to flow or be blocked depending on the applied voltage.

The basic working principle behind the STW28NM50N is that when a voltage is applied, a depletion region forms around the gate of the MOSFET. The depletion region is responsible for controlling the current flow through the device. This region is created by the presence of an electric field due to the applied voltage. Depending on the voltage applied, the size of the depletion region changes. If the voltage is low, only a small depletion region is created, allowing current to flow freely. However, as the voltage is increased, the size of the depletion region increases, blocking the current flow. The size of the depletion region is proportional to the voltage applied to the gate, allowing the current flow to be finely controlled. This is how the STW28NM50N is able to function as a voltage-controlled switch.

Conclusion

The STW28NM50N is a versatile N-channel MOSFET with a low RDS(on) at 4.5 V. It is designed for use in applications such as DC/DC converters, servers, and general purpose power switching. Its working principle is based on the formation of a depletion region due to the application of voltage to the gate, which changes the current flow through the device. This device offers excellent performance in a variety of applications that require a high-current, low voltage MOSFET.

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