STW24NK55Z Allicdata Electronics
Allicdata Part #:

497-7034-5-ND

Manufacturer Part#:

STW24NK55Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 550V 23A TO-247
More Detail: N-Channel 550V 23A (Tc) 285W (Tc) Through Hole TO-...
DataSheet: STW24NK55Z datasheetSTW24NK55Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 285W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4397.5pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 550V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW24NK55Z is a single N-channel MOFSET that is used to provide efficient switching in a wide variety of applications. This power transistor consists of a compact and lightweight package and is designed to offer high-performance switching, current sensing and load switching capabilities. The STW24NK55Z can handle a wide range of voltages and currents for both switching and current sensing operations.

In current sensing applications, the STW24NK55Z can measure low currents down to several microamps with a 0.01Ω sensing resistance, making it ideal for power system diagnostics, monitoring and control. As a switch, the STW24NK55Z is capable of providing high power efficiency and is suitable for switching single and multiple loads. It can also be used for switching multiple phases of a single electrical system with high frequency pulse width modulation.

The STW24NK55Z is composed of two components, an N-channel MOFSET and a gate driver. The N-channel MOSFET is a four-terminal device consisting of a source, gate, drain and body, which are all connected internally. The gate driver is an integrated circuit which is designed to provide a controlled voltage to the gate of the MOSFET. This ensures that the MOSFET will switch in a controlled manner with a stable and reliable switching characteristic.

The working principle of the STW24NK55Z is based on the principle of junction field effect transistors (JFET). In a typical FET, an electric field is created between the source and the gate when a voltage is applied to the gate, which is also known as the ‘gate-source voltage’. This electronic field deforms the channel of the FET which controls the amount of current flowing through the FET. Similarly, in an N-channel MoFET, an electronic field is created between the drain and the gate when a voltage is applied to the gate, known as the ‘gate-drain voltage’. This electronic field deforms the channels of the MOSFET which controls the amount of current flowing through the FET.

The advantages of using the STW24NK55Z lie in its ability to switch rapidly and efficiently, as well as its low on-resistance and fast switching times. This makes it ideal for use in a wide range of applications such as motor control, lighting control, and AC-DC voltage conversion. The STW24NK55Z is a reliable and efficient power switch that can provide consistent performance with reliable current sensing and load switching capabilities.

The specific data is subject to PDF, and the above content is for reference

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