
Allicdata Part #: | 497-8454-5-ND |
Manufacturer Part#: |
STW23NM60ND |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 19.5A TO-247 |
More Detail: | N-Channel 600V 19.5A (Tc) 150W (Tc) Through Hole T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STW23NM60ND is a field-effect transistor, also known as a FET, MOSFET or insulated gate bipolar transistor (IGBT). It is an N-channel device that can be used as a switch or amplifier in circuits. This type of transistor has a number of advantages over traditional bi-polar transistors, including low input voltage, fast switching times and reduced power consumption. The STW23NM60ND is an excellent choice for applications that involve the integration of analog and digital signals.
The STW23NM60ND works on the principle of changing the resistance of a channel between two terminals (or “gates”) in order to regulate the flow of current through it. A voltage applied to the gate will cause a change in the resistance of the channel and thus affects the current flowing through it. This transistor can be used to amplify signals or as a switching device.
One of the main advantages of the STW23NM60ND is its low power consumption. By controlling the gate voltage, the transistor can be made to consume very little power. This is especially important in battery-powered circuit designs, where every milliwatt saved is money in the bank.
The STW23NM60ND is a good choice for switching applications in which digital signals need to be communicated over long distances. The high switching speed and low power consumption of this device make it an ideal solution for connecting multiple components in a distributed system.
The STW23NM60ND is also well suited for analog circuits, where it can amplify and control signals with minimal distortion. This is especially useful in applications such as digital to analog converters and audio amplifiers.
In addition to its versatile nature, the STW23NM60ND is also a reliable device. It is robust and able to withstand high temperatures and voltages, making it suitable for use in extreme conditions. The STW23NM60ND is also a relatively small device, so it can be used in space-constrained applications.
Overall, the STW23NM60ND is a device with many applications in both analog and digital circuits. Its excellent switching performance, low power consumption, and reliable performance make it suitable for a wide range of situations. Furthermore, its small size and robust construction make it an excellent choice for applications where size and reliability are key factors.
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