STW25N80K5

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The STW25N80K5 is a N-channel MOSFET that belongs to the STripFET™ II family of MOSFETs. This particular device is one of STMicroelectronics\' newer generation of products, and is designed to withstand extreme voltage and temperature conditions while providing superior power dissipation and performance. Thanks to its ultra-low gate charge and low threshold voltage, this N-channel MOSFET can be used for high-speed switching applications.

The STW25N80K5 is an N-channel MOSFET that uses an n-type silicon body and an integrated high-speed P-channel body diode to switch between an ON and OFF state. This device has a rated drain current of 25A and an on-state resistance of 0.081 Ω at a Gate-Source Voltage (Vgs) of 4.5V. It has a maximum Rth=3.3 K/W and can deliver up to 80 watts of power dissipation.

One of the most common applications for the STW25N80K5 is power converters and power supplies, where the device is used to control the current and voltage in a variety of electronics systems. This device can also be used in relay and solenoid control, motor control, and other applications where higher supplied currents are needed.

The STW25N80K5 can operate at temperatures ranging from -55°C to 175°C, and it has a maximum Junction-to-Case thermal resistance of 3.3 K/W. Its maximum drain-source voltage is 500V, and its total gate charge is 4nC. It also has a low Rds(on) of 0.081Ω with a Vgs of 4.5V.

Because of its low threshold voltage, high speed and low on-state leakage, the STW25N80K5 is ideal for high-speed switching applications, such as motor control, relay and solenoid control, and power converters and power supplies. The device\'s high-speed P-channel body diode allows it to switch quickly between ON and OFF states, and its ultra-low gate charge and low Rds(on) make it an efficient choice for use in battery-powered products.

The STW25N80K5 is a versatile MOSFET that can be used in a variety of applications. It is a reliable and robust device that can handle extreme temperatures and voltages while providing superior performance. The device\'s ultra-low gate charge and low threshold voltage make it an ideal choice for high-speed switching applications.

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