STW24NM65N

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The STW24NM65N is a N-channel metal oxide semiconductor field-effect transistor (MOSFET) in a PowerFLAT 5x6 package, rated for a drain-source voltage of about 600V. This device\'s conduction is based on theINVENTER principle, which combines some of the best attributes of MOSFET technology with the high performance of a bipolar junction transistor (BJT).

MOSFETs are three terminal devices capable of controlling high power in a small package. The JFET transistor Family consists of an insulated gate, a channel region and a drain.In the N-channel MOSFET, the gate electrode is positively charged and has a positive voltage applied to it. If a negative voltage is applied, the drain to source voltage increases. As a result an electric field develops between the drain and source, resulting in the formation of an inversion region within the active area of the MOSFET. As the gate voltage increases, the inversion layer is pushed further away from the source and the drain current increases.

In contrast, the STW24NM65N is different from any other MOSFETs. Thanks to INVENTER technology, the drain current is not always directly proportional to the gate voltage. Rather, the drain current increases under both positive and negative gate-source voltages. The advantages offered by this device include enhanced linearity, lower on-state resistance and higher power dissipation. This makes the STW24NM65N an excellent choice for applications requiring superior performance and reliability such as high frequency switching and power management.

The STW24NM65N features a high breakdown voltage of 600V, a maximum Drain-Source On-State Resistance RDS(ON) of 9.5mohm, and a current-carrying capability of 8A. The device also features a maximum Drain-Source Voltage VGS(MAX) of 20V at a gate-source voltage of -5V, which is more than sufficient for the vast majority of applications. The device also features a lower thermal resistance than comparable MOSFETs, making it better suited for applications with higher power dissipation requirements.

In summary, the STW24NM65N provides superior performance, reliability and robustness for high frequency switching applications such as power management, motor control and other high power systems. Thanks to INVENTER technology, the STW24NM65N is a viable alternative to conventional MOSFETs and other power semiconductor devices. This enabled the device to provide superior performance and reliability, making it the ideal solution for a wide range of applications that require robust and reliable performance.

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