STW23N85K5

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1650pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	SuperMESH5™
Rds On (Max) @ Id, Vgs:	275 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drain to Source Voltage (Vdss):	850V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to STW23N85K5 The STW23N85K5 is an self-protected medium voltage N-channel Power MOSFETs with a nominal voltage of up to 650 V. This particular MOSFET includes top-level over-temperature, undervoltage lockout, and overvoltage protection, protecting both itself and any connected device from overloads and power cycling errors. It is one of the most widely used power MOSFET products, proving to be a key component in many settings.Application Field of STW23N85K5The STW23N85K5 can be widely applied in many different settings and industries, such as industrial control, supply network applications, PFC (Power Factor Correction) circuits, audio amplifiers, switching power supplies, motor drives and many other applications. It’s highly robust design, consisting of a powerful safe operating region and fast switching speeds, makes it a perfect choice for these demanding environments.In addition to these applications, this MOSFET provides an ideal solution for users who want to take advantage of the high level of noise sensitivity and fast switching speeds. Its fast switching times and low noise operation make the STW23N85K5 a great choice for use in audio amplifiers. Furthermore, this MOSFET’s over temperature and overvoltage protection make it an ideal choice for applications where quick reaction times are required, such as in motor drives and in switching power supplies. It is power efficient and able to dissipate heat quickly and effectively, making it a top choice for high-power applications where heat management is critical.Working Principle of STW23N85K5The working principle of the STW23N85K5 is identical to standard N-channel MOSFETs. With the help of a charge pump, the gate of the MOSFET is charged up to a level which will allow it to turn on and off when a voltage is applied across its drain and source. This is known as ‘strong inversion’.When the gate voltage is increased, the MOSFET begins to conduct, allowing current to flow between the drain and source. When this current is removed, the gate voltage is decreased and the device no longer conducts. This process is known as the off state.The STW23N85K5 is unique in that it also includes a self-protection circuit. This circuit will shut down the device when it detects an over temperature, under voltage, or overvoltage condition. This feature is essential for systems where reliability and safety are critical.In conclusion, the STW23N85K5 is a single Power N-channel MOSFET based on the strong inversion principle. It is widely used in many industries and applications, from industrial control to audio amplification. It’s unique self-protection circuit makes it a safe choice for critical systems and its robust design ensures reliable operation.

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