Allicdata Part #: | 497-12873-5-ND |
Manufacturer Part#: |
STW21N90K5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 900V 18.5A TO-247 |
More Detail: | N-Channel 900V 18.5A (Tc) 250W (Tc) Through Hole T... |
DataSheet: | STW21N90K5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1645pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | SuperMESH5™ |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW21N90K5 is a 900V N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device that is commonly used in a wide range of applications. It is constructed of a Silicon substrate and has an internal layout where source (S) and drain (D) contacts attach to a substrate body to form a channel between these two contacts. The STW21N90K5 offers very high speed switching and low on resistance, making it ideal for applications requiring high speed switching such as power converters, motor control systems, frequency control systems and power amplification. This type of MOSFET is also very efficient in controlling the intensity of light in lighting systems, allowing for better control of the brightness or dimness of the lights. When using the STW21N90K5 in a component, it is important to understand the working principle involved in order to get the most out of the device. The working principle of the STW21N90K5 relies on the fact that it has an insulated gate region between the source and drain contacts. This gate region is used to control the flow of electrons between the source and drain.The flow of electrons is controlled by a voltage applied to the gate which causes a depletion region to be formed at the interface between the gate and the semiconductor substrate. This depletion region creates a barrier which stops electrons from flowing between the source and drain, thus allowing the MOSFET to be used as a switching device. When a negative voltage is applied to the gate, electrons are attracted to the gate causing them to flow towards the source, thus turning on the MOSFET and enabling a current to flow between the source and drain. The STW21N90K5 is also used as an amplifier due to its low on resistance and very low input capacitance making it ideal for use as a power amplifier. When used as an amplifier the gate voltage is used to control the amount of current flowing between the source and drain which allows the STW21N90K5 to produce an amplified output.The STW21N90K5 MOSFET features a wide range of standard features such as fast switching times, low on resistance, low input capacitance and low power dissipation. These features make the STW21N90K5 an ideal device for use in a variety of applications where high speed switching or power amplification is required.
The specific data is subject to PDF, and the above content is for reference
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