STW21N90K5 Allicdata Electronics
Allicdata Part #:

497-12873-5-ND

Manufacturer Part#:

STW21N90K5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 900V 18.5A TO-247
More Detail: N-Channel 900V 18.5A (Tc) 250W (Tc) Through Hole T...
DataSheet: STW21N90K5 datasheetSTW21N90K5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 299 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW21N90K5 is a 900V N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device that is commonly used in a wide range of applications. It is constructed of a Silicon substrate and has an internal layout where source (S) and drain (D) contacts attach to a substrate body to form a channel between these two contacts. The STW21N90K5 offers very high speed switching and low on resistance, making it ideal for applications requiring high speed switching such as power converters, motor control systems, frequency control systems and power amplification. This type of MOSFET is also very efficient in controlling the intensity of light in lighting systems, allowing for better control of the brightness or dimness of the lights. When using the STW21N90K5 in a component, it is important to understand the working principle involved in order to get the most out of the device. The working principle of the STW21N90K5 relies on the fact that it has an insulated gate region between the source and drain contacts. This gate region is used to control the flow of electrons between the source and drain.The flow of electrons is controlled by a voltage applied to the gate which causes a depletion region to be formed at the interface between the gate and the semiconductor substrate. This depletion region creates a barrier which stops electrons from flowing between the source and drain, thus allowing the MOSFET to be used as a switching device. When a negative voltage is applied to the gate, electrons are attracted to the gate causing them to flow towards the source, thus turning on the MOSFET and enabling a current to flow between the source and drain. The STW21N90K5 is also used as an amplifier due to its low on resistance and very low input capacitance making it ideal for use as a power amplifier. When used as an amplifier the gate voltage is used to control the amount of current flowing between the source and drain which allows the STW21N90K5 to produce an amplified output.The STW21N90K5 MOSFET features a wide range of standard features such as fast switching times, low on resistance, low input capacitance and low power dissipation. These features make the STW21N90K5 an ideal device for use in a variety of applications where high speed switching or power amplification is required.

The specific data is subject to PDF, and the above content is for reference

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