STW20NM60FD Allicdata Electronics
Allicdata Part #:

497-5415-5-ND

Manufacturer Part#:

STW20NM60FD

Price: $ 3.06
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 20A TO-247
More Detail: N-Channel 600V 20A (Tc) 214W (Tc) Through Hole TO-...
DataSheet: STW20NM60FD datasheetSTW20NM60FD Datasheet/PDF
Quantity: 1000
1 +: $ 3.06000
10 +: $ 2.96820
100 +: $ 2.90700
1000 +: $ 2.84580
10000 +: $ 2.75400
Stock 1000Can Ship Immediately
$ 3.06
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 214W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: FDmesh™
Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW20NM60FD is a type of power MOSFET (metal oxide semiconductor field effect transistor) that is designed to work in a wide range of applications. This device has been around since 2009, and it is still in use today in many industrial applications. The application field and working of the STW20NM60FD is described in this article.

The STW20NM60FD is a single N-channel enhancement type of power MOSFET that is suitable for switching and linear applications. The part is housed in a TO-220AB package. This device has a drain-source breakdown voltage of 600V, a maximum drain current of 20A, and a continuous drain current of 10A. This device is made using a feature called advanced low voltage gate drive technology, which means that the gate-source voltage is less than 10V. The STW20NM60FD has an on-state resistance of 0.105ohm, which is suitable for applications that require low on-state voltage.

The STW20NM60FD can be used in applications such as motor control, relay control, power converters, AC/DC inverters, and other high power switching applications. This FET is also suitable for battery chargers, uninterruptible power supplies, and renewable energy systems. In these applications, the device is capable of working in a wide range of temperatures, with an operating temperature range of -55℃ to +175℃.

The working principle of the STW20NM60FD is based on the enhancement mode of operation. In this type of operation, the device is switched off when the gate-source voltage is below a certain threshold, and it is switched on when the voltage surpasses the threshold. To switch off the device, the voltage applied to the gate must be reduced below the threshold. To switch on the device, the gate-source voltage must be increased above the threshold. This device also requires a turn-off and turn-on times, which means that when the voltage is increased or decreased, it will take a certain amount of time for the device to turn on or off. The turn-on time of this device is 30 ns, and the turn-off time is 10 ns.

The STW20NM60FD is a very versatile and reliable device that can be used in a variety of applications. It is designed to operate at a wide range of temperatures, and it is capable of handling high power switching applications. This device is also designed to have a low on-state voltage, which makes it suitable for applications that require a low on-state resistance. This device is a reliable choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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